Metal thin film deposition method

Abstract

The invention provides a method for depositing a metal thin film, comprising the steps of: providing a substrate to be deposited, cleaning the substrate and placing it in a vacuum chamber; after the temperature in the vacuum chamber is raised to a preset temperature, depositing a metal thin film on the surface of the substrate; A silicon film is deposited on the surface of the metal film in the vacuum chamber, and the silicon film is used to prevent the metal film from being oxidized; wherein, the preset temperature is the same as that during the deposition of the silicon film. The present invention creatively places the deposition process of the metal film at the deposition temperature of the silicon film, and continuously generates a silicon film on the surface of the metal film after depositing the metal film to protect the metal film, while ensuring the performance of the metal film , can prevent the metal film from being oxidized and polluted during the substrate transfer process, and avoid subsequent adverse effects on the composition characterization analysis of the metal film and affect the subsequent process.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for depositing a metal thin film. Background technique [0002] Metal thin film deposition is a large category of thin film deposition processes. In addition to physical vapor deposition (Physical Vapor Deposition, PVD), chemical vapor deposition (Chemical Vapor Deposition, CVD) and atomic layer deposition (Atomic Layer Deposition, ALD) are also commonly used to deposit metal film. Atomic layer deposition includes high temperature atomic layer deposition (Thermal ALD, THALD) and plasma enhanced atomic layer deposition (Plasma Enhanced ALD, PEALD). In the process of chemical vapor deposition and atomic layer deposition, the metal compound precursor participates in the deposition as the reaction source of the metal film, and the substrate needs to be heated during the deposition process. Even in the relatively low-temperature PEALD process, the substr...

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Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a method for depositing a metal thin film, which is used to solve the problem of the metal activity and / or waste heat of the wafer in the prior art that causes the wafer to be deposited on the metal thin film. When the circle is exposed in the air, it is easy to form a metal oxide film on the surface of the metal film, resulting in a decrease in the performance of the film, and bringing a lot of inconvenience to the subsequent film analysis, affecting the development of process parameters and other issues

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