Preparation method of efficient and stable CsPbI3 inorganic perovskite battery
An inorganic calcium and perovskite technology, which is applied in semiconductor/solid-state device manufacturing, circuits, photovoltaic power generation, etc., can solve the problems of slow development and poor crystallinity, and achieve the effects of reducing agglomeration, high crystallinity, and high conversion efficiency
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Embodiment 1
[0030] A highly efficient and stable CsPbI 3 A preparation method for an inorganic perovskite battery, comprising the following steps:
[0031] (1) SnO 2 Solution configuration: SnO with a mass ratio of 15% 2 Dilute the aqueous solution with water according to the volume ratio of 1:6.5, then add 2mg / ml RbCl, stir at room temperature for 40-50min, filter for later use;
[0032] (2)SnO 2 Preparation of thin film: the glass substrate containing FTO layer is placed on the glue homogenizer, the SnO prepared in step (1) 2 Spread the solution on the glass substrate, adopt the one-step spin coating method, set the speed and time of the homogenizer to rotate at a low speed of 1000rpm for 3s, rotate at a high speed of 3000rpm for 30s, and anneal at 150°C for 30min to obtain SnO 2 Thin film, the film thickness is 40nm;
[0033] (3) Preparation of guanidine hydrochloride solution: Dissolve guanidine hydrochloride powder in isopropanol, heat and stir at 60°C for 1-2 hours to dissolve ...
Embodiment 2
[0039] A highly efficient and stable CsPbI 3 A preparation method for an inorganic perovskite battery, comprising the following steps:
[0040] (1) SnO 2 Solution configuration: SnO with a mass ratio of 15% 2 Dilute the aqueous solution with water according to the volume ratio of 1:6.5, then add 3mg / ml RbCl, stir at room temperature for 40-50min, filter for later use;
[0041] (2)SnO 2 Preparation of thin film: the glass substrate containing FTO layer is placed on the glue homogenizer, the SnO prepared in step (1) 2 Spread the solution on the glass substrate, adopt the one-step spin coating method, set the speed and time of the homogenizer to rotate at a low speed of 1000rpm for 3s, rotate at a high speed of 3000rpm for 30s, and anneal at 150°C for 30min to obtain SnO 2 Thin film, the film thickness is 40nm;
[0042] (3) Preparation of guanidine hydrochloride solution: Dissolve guanidine hydrochloride powder in isopropanol, heat and stir at 60°C for 1-2 hours to dissolve ...
Embodiment 3
[0048] A highly efficient and stable CsPbI 3 A preparation method for an inorganic perovskite battery, comprising the following steps:
[0049] (1) SnO 2 Solution configuration: SnO with a mass ratio of 15% 2 Dilute the aqueous solution with water according to the volume ratio of 1:6.5, then add 2mg / ml RbCl, stir at room temperature for 40-50min, filter for later use;
[0050] (2)SnO 2 Preparation of thin film: the glass substrate containing FTO layer is placed on the glue homogenizer, the SnO prepared in step (1) 2 Spread the solution on the glass substrate, use a spin coating method, set the speed and time of the homogenizer to rotate at a low speed of 1000rpm for 3s, rotate at a high speed of 3000rpm for 30s, and anneal at 150°C for 30min to obtain SnO 2 Thin film, the film thickness is 40nm;
[0051] (3) Preparation of guanidine hydrochloride solution: Dissolve guanidine hydrochloride powder in isopropanol, heat and stir at 60°C for 1-2 hours to dissolve completely, p...
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