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Hole buffer material, preparation method thereof and OLED device

A technology of hole buffering and hole buffering layer, which is applied in the manufacture of electric solid devices, semiconductor devices, semiconductor/solid state devices, etc., can solve problems such as flow imbalance, affecting device efficiency, energy loss, etc., and achieve improved conductivity , The effect of improving the current efficiency

Pending Publication Date: 2022-03-18
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in OLED materials, the mobility of holes is often greater than that of electrons, resulting in an imbalance of carriers in the device, causing a part of the energy to be lost in the form of heat, thereby affecting the efficiency of the device.

Method used

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  • Hole buffer material, preparation method thereof and OLED device
  • Hole buffer material, preparation method thereof and OLED device
  • Hole buffer material, preparation method thereof and OLED device

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Embodiment Construction

[0058]The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application. In addition, it should be understood that the specific implementations described here are only used to illustrate and explain the present application, and are not intended to limit the present application. In this application, unless stated to the contrary, the used orientation words such as "up" and "down" usually refer to up and down in the actual use or working state of the device, specifically the direction of the drawing in the drawings ; while "inside" and "outside" refer to the outline of t...

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Abstract

The invention discloses a hole buffer material, a preparation method thereof and an OLED device. The hole buffer material comprises vanadium pentoxide and graphene oxide, and the weight ratio of the vanadium pentoxide to the graphene oxide is 3: (1-3); wherein the hole buffer layer is made of a layered composite material and comprises a graphene oxide nanosheet and a vanadium pentoxide nanobelt. The hole buffer material provided by the invention adopts a vanadium pentoxide and graphene oxide composite material and has a multilevel structure, and graphene oxide nanosheets and ultrathin vanadium pentoxide nanoribbons support each other; the graphene can also improve the conductivity of the material, and can effectively improve the current efficiency of the OLED device.

Description

technical field [0001] The present application relates to the display field, in particular to a hole buffering material, a preparation method thereof, and an OLED device. Background technique [0002] Organic light-emitting diodes (OLEDs) have the advantages of self-illumination, wide viewing angle range, low power loss, short response time, high contrast, and flexible display. They are widely used in new displays and become the leader in today's display market. Development of new screen displays of different sizes. [0003] Under the action of an external electric field, the semiconductor light-emitting material in the OLED device forms excitons in the light-emitting layer through carrier injection, transport, and recombination, and the exciton transition radiation produces luminescence. Therefore, the recombination luminous intensity of an OLED device is proportional to the recombination probability of excitons and the concentration of electrons and holes. To obtain a dev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K71/15H10K50/18
Inventor 杜玲玉
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD