Silicon carbide wafer, method for producing same, and semiconductor device
A silicon carbide crystal and manufacturing method technology, which is applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, chemical instruments and methods, etc., can solve problems such as difficulty in ensuring the mechanical properties of silicon carbide ingots and silicon carbide wafers.
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[0245] Example - Manufacture of silicon carbide ingots
[0246] as in figure 2 In the illustrated example of a silicon carbide ingot manufacturing apparatus, silicon carbide powder as a raw material 300 is filled in the lower portion of the inner space of the reaction vessel 200 , and a silicon carbide seed crystal 110 is placed on the upper portion. In this case, the applicable silicon carbide seed crystal is composed of a 6-inch 4H-silicon carbide crystal, which is fixed by a conventional method so that the C plane ((000-1) plane) faces the silicon carbide raw material at the lower part of the internal space, so Suitable above reaction vessels have the thermal conductivities of the examples in Table 1 below.
[0247] After the reaction vessel 200 is sealed and its exterior is surrounded by a heat insulating material 400 , the reaction vessel is arranged in a quartz tube 500 with a heating coil as a heating unit 600 installed outside the quartz tube 500 . The internal spac...
Embodiment and
[0251] Examples and Comparative Examples - Manufacture of Silicon Carbide Wafers
[0252] The outer peripheral surface of the silicon carbide ingot cooled in the manufacture of the silicon carbide ingot of the above-mentioned examples and comparative examples was ground so that the outer diameter became 95% of the maximum outer diameter, thereby processing it into a silicon carbide ingot having a uniform outer diameter. The cylindrical shape was cut so as to form an off angle of 4° from the (0001) plane of the silicon carbide ingot, and a silicon carbide wafer with a thickness of 360 μm was produced. Thereafter, the silicon carbide wafer was ground with a diamond wheel to make the thickness flat, and then chemical mechanical polishing (chemical mechanical polishing) was performed with a silicon slurry. Cut in a size of 10 mm × 10 mm at any 5 positions in the internal area except for the peripheral annular area occupying a width of 10 mm from the outermost peripheral edge of th...
experiment example -
[0253] Experimental Example - Defect Density Measurement of Silicon Carbide Wafer
[0254] The silicon carbide wafer samples prepared in the above examples and comparative examples were etched by immersing in molten potassium hydroxide (KOH) for 5 minutes at a temperature of 500° C., as Figure 4 As shown, defects on the surface are photographed with an electron microscope or the like. Classify clam-shaped depressions as basal dislocations, small hexagonal depressions as threading edge dislocations, and black giant hexagonal depressions as micropipes.
[0255] The 500 μm × 500 μm area in the diced wafer sample was randomly designated 12 times, the number of defects in each of the above areas was determined, and the average number of defects per unit area was calculated to obtain the defect density. The results are shown in Table 1.
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