Solid-state memory data operation method and device

Abstract

The invention discloses a solid-state memory data operation method and device, and in the scheme, a corresponding operation parameter is determined according to the current working temperature of a solid-state memory, and then data operation is performed on the solid-state memory based on the operation parameter. In the application, when the data operation is performed on the solid-state memory, fixed operation parameters are not used, but the factor of the current working temperature of the solid-state memory is considered, and further, the historical temperature factor when the corresponding storage address data is written in during data reading is also considered; at the moment, the determined operation parameters are better operation parameters for operating the data of the solid-state memory at the current temperature, so that the data operation is performed on the solid-state memory based on the operation parameters, the risk of data errors can be reduced, the access delay is further reduced, the storage performance, the data security and the equipment stability are improved, and the user experience is improved. And the service life of the solid-state memory can be prolonged.

Description

technical field [0001] The invention relates to the technical field of data processing, in particular to a solid-state memory data operation method and device. Background technique [0002] With the development of the automobile industry, the application of new energy technology, automatic / assisted driving technology, and multimedia center design solutions in the automotive field, on-board memory has become one of the indispensable components of modern automobiles; at the same time, in recent years, with the With the development of solid-state memory technology, its outstanding advantages such as small size, low power consumption, good shock resistance, and high bandwidth in many storage application fields have prompted it to gradually replace traditional mechanical hard disks. [0003] However, since the internal main storage medium of solid-state memory is flash memory, and flash memory has strict restrictions on the operating temperature and its variation range; that is, ...

AI Technical Summary

Problems solved by technology

[0004] However, data accesses such as reading and writing of solid-state memory in high temperature and low temperature environments, or high temperature writing and low temperature reading, and low temperature writing and high temperature reading will generate a higher proportion of errors (such as RBER(Raw BitError Rate, original bit error rate)), a high percentage error rate will not only affect the increase in read latency due to the increase in error correction complexity, but may even cause the risk and abnormality of data loss due to error correction failure

[0005] To sum up, how to solve the problem of increasing the proportion of data read and write errors in the environment of high and low temperature, or sudden temperature rise or drop, is a difficult problem faced by technicians in the field of vehicle storage, and corresponding solutions need to be found

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