Substrate preheating device and equipment for epitaxial process

A technology of preheating device and epitaxy process, which is applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc., can solve problems such as poor epitaxy quality, and achieve the effect of improving preheating efficiency and efficient preheating.

Pending Publication Date: 2022-04-12
JIHUA LAB
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of this application is to provide a substrate preheating device and equipment for the epitaxial process, aiming at solving the problem caused by the substrate temperature not meeting the temperature requirements of the epitaxial process during the preheating process of the substrate before the epitaxial process. The problem of poor epitaxy quality

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  • Substrate preheating device and equipment for epitaxial process
  • Substrate preheating device and equipment for epitaxial process
  • Substrate preheating device and equipment for epitaxial process

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Embodiment Construction

[0042] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, not all of them. The components of the embodiments of the application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations. Accordingly, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of the present application.

[0043] It should ...

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Abstract

The invention relates to the field of semiconductor manufacturing, in particular to a substrate preheating device and equipment for an epitaxial process, the substrate preheating device for the epitaxial process is used for preheating a substrate before epitaxial growth, and the substrate preheating device for the epitaxial process comprises a base; the substrate taking and placing table is used for loading and fixing a substrate; the substrate heater is used for carrying out preheating treatment on a substrate, the substrate heater is arranged above the substrate, and the substrate heater is fixedly connected to the base; and the lifting driving assembly is used for driving the substrate taking and placing table to do lifting motion, so that the substrate is close to or far away from the substrate heater. According to the substrate preheating device for the epitaxial process, the substrate heater is arranged above the substrate, so that heat emitted by the substrate heater directly acts on the upper surface of the substrate, and the temperature of the upper surface of the substrate meets the temperature requirement of the epitaxial process.

Description

technical field [0001] The present application relates to the field of semiconductor manufacturing, in particular, to a substrate preheating device and equipment for epitaxy process. Background technique [0002] The epitaxial growth process is carried out under high temperature and low pressure environment. In the epitaxial process, the growth process of the substrate is a complex chemical process. In order to prepare high-quality epitaxial layers, the substrate needs to be pretreated before epitaxial growth, including certain Degassing at high temperature, removal of oxide layer and other impurities on the surface of the substrate, and back sealing before the heavy doping process, etc., so the substrate needs to be preheated. [0003] In some existing substrate preheating devices, the substrate heater heats the substrate by heating the bottom of the substrate, while in the epitaxial process, the substrate grows on the surface layer, so heating the bottom of the substrate w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H01L21/687
Inventor 胡承赵海英徐俊盛飞龙吴彩庭孔倩茵
Owner JIHUA LAB
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