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Method for producing silicon-containing polymer composition

A technology of silicon polymer and manufacturing method, which is applied in chemical instruments and methods, ion exchange column/bed method, photoplate making process of patterned surface, etc., and can solve the problems of poor thermal stability and inapplicability of refined compounds

Pending Publication Date: 2022-04-12
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In addition, although distillation refining can also be used as a method for effectively removing metal impurities, there are problems such as that it cannot be used when the compound to be purified is solid or has a high boiling point, or when the compound to be purified has poor thermal stability.
[0005] As a general method for removing metal impurities, there is also known a method using ion exchange resins, but ion exchange resins act as catalysts for promoting the polymerization of alkoxysilanes, and there is a problem that the modification of the compound to be purified is accelerated.

Method used

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  • Method for producing silicon-containing polymer composition
  • Method for producing silicon-containing polymer composition
  • Method for producing silicon-containing polymer composition

Examples

Experimental program
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Effect test

Embodiment 1

[0135] For 95 g of the silicon-containing polymer (A) PGEE / PGMEA solution (solid content: about 13% by mass) produced by the method of Synthesis Example 3 of WO2016 / 031563, wash with the PGEE / PGMEA solution, and remove the moisture as the resin. The ORLITE DS-1 (trade name) manufactured by the Olugano company of the gel-type strongly acidic cation-exchange resin that was replaced was added 5 g on the basis of dry resin, and after stirring at room temperature for 24 hours, the resin was removed by decantation to obtain a treatment solution ( refined solution).

[0136] The obtained purified silicon-containing polymer (A) solution was measured by GPC for the molecular weight, and was measured for the amount of residual metal by inductively coupled plasma mass spectrometry (ICP-MS (Agilent 7500: manufactured by Agilent Technology Co., Ltd.)). Table 1 shows the measurement results of the molecular weight and the amount of residual metal. The amount of residual metal shows the val...

Embodiment 2

[0147] Using the same ion exchange resin as in Example 1 and a freshly produced polymer to be treated, a treatment solution (purified solution) was obtained by column flow ion exchange. In addition, the flow velocity of the polymer to be treated is adjusted so that the space velocity (SV [1 / h]: Space velocity) is 2 relative to the volume of the resin packed layer in the column, that is, the residence time of the treated liquid is 30 minutes. . In addition, the operation was carried out at normal temperature. Table 2 shows the measurement results of the molecular weight and the amount of residual metal.

[0148] Table 2

[0149]

[0150] (* Untreated: sample before the treatment of Example 2)

[0151] As shown in Table 2, also in the case of using the ion exchange resin of Example 2 in the column flow-through method, it was possible to remove residual metal impurities while suppressing the modification of the silicon-containing polymer.

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Abstract

The purpose of the present invention is to provide: a silicon-containing polymer composition to be treated, which contains a metal impurity, by treating the silicon-containing polymer composition with an ion exchange resin having a specific structure, whereby the change in weight-average molecular weight ([Delta] Mw) before and after the treatment can be suppressed; the present invention relates to a method for purifying a silicon-containing polymer composition, a silicon-containing polymer composition, and a method for manufacturing a semiconductor device. The present invention is a method for purifying a silicon-containing polymer composition in which the change in weight-average molecular weight ([Delta] Mw) before and after treatment is reduced, characterized by treating a treated silicon-containing polymer composition containing an organic solvent with a gel-type cation exchange resin. The weight-average molecular weight change ([Delta] Mw) before and after the treatment is 70 or less. The ion exchange resin preferably has a highly acidic functional group. The total residual amount of 24 metal elements after the ion exchange treatment is 1 ppb or less.

Description

technical field [0001] The present invention relates to an industrially useful method for producing a silicon-containing polymer (method for purifying metal impurities) in which metal impurities that cause defects are reduced in a photolithography process when manufacturing a semiconductor device. Background technique [0002] The composition for forming a coating film for lithography used in the lithography process of semiconductor device manufacturing is required to reduce metal impurities that cause microscopic defects (for example, about 1 to 100 nm, called defects) on the wafer. [0003] A purification method for efficiently obtaining a silicone resin with a low content of alkali metal ions has been disclosed (Patent Document 1). [0004] In addition, although distillation refining can be used as a method for effectively removing metal impurities, there are problems such as that it cannot be used when the compound to be purified is solid or has a high boiling point, or ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G77/34B01J39/05G03F7/11
CPCB01J39/05C08G77/32G03F7/11B01J47/011B01J47/02C08G77/34B01J39/20G03F7/0757H01L21/0274B01J39/16
Inventor 大矢拓未
Owner NISSAN CHEM IND LTD
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