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248 nm thick film photoresist resin as well as preparation method and application thereof

A photoresist and resin technology, which is applied in the field of 248nm thick film photoresist resin and its preparation, can solve the problems of insufficient heat resistance, inability to suppress fluctuation phenomenon, poor film peelability, etc.

Active Publication Date: 2021-03-12
SHANGHAI SINYANG SEMICON MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is that in the prior art, the KrF light source thick film photoresist film is cracked, the uniformity of the film thickness is not good, there are many defects, the resolution and sensitivity are not good, the film peeling property is not good, the shape is not good, and the rectangular Poor performance, poor resolution, insufficient heat resistance, inability to suppress fluctuations or severe impurities, etc., for this reason, a 248nm thick film photoresist resin and its preparation method and application are provided

Method used

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  • 248 nm thick film photoresist resin as well as preparation method and application thereof
  • 248 nm thick film photoresist resin as well as preparation method and application thereof
  • 248 nm thick film photoresist resin as well as preparation method and application thereof

Examples

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preparation example Construction

[0172] Preparation of resin

[0173] Resins 1-15 used in Examples or Comparative Examples were prepared according to the following methods. The individual monomers used are as follows:

[0174] Monomer A:

[0175]

[0176] Monomer B:

[0177]

[0178] Monomer C:

[0179]

[0180] Monomer D:

[0181]

[0182] Monomer E:

[0183]

[0184] Step 1: Add the amount of monomers according to A-E in Table 1 into a reaction kettle filled with nitrogen, then add 100g of ethyl acetate into the reaction kettle, stir evenly, raise the temperature of the reaction kettle to 77°C, and then add to the reaction kettle again A mixture of ethyl acetate (20 g) and benzoyl peroxide (2 g) was added dropwise to the kettle, and the addition was completed in 10 minutes. React at 77°C for 7 hours, stop the reaction, and cool the temperature of the reaction solution to room temperature;

[0185] Step 2: After the reaction solution was cooled to room temperature, methanol (1000 g) was...

Embodiment 1-10 and comparative example 1-10

[0193] Photoacid Generator:

[0194] Add the ingredients according to Table 2 into a new clean 100mL glass bottle. At room temperature, the mixture was shaken in the bottle for 24 hours to fully dissolve it, and then the photoresist solution was filtered through 0.22 micron and 0.02 micron filters successively to obtain a photoresist composition.

[0195] Table 2

[0196] Example number Resin serial number photoacid generator solvent Resin weight PAG weight solvent weight 1 1 PAG1 Cyclohexanone 25g 5g 70g 2 2 PAG2 ethyl acetate 30g 0.60g 69.40g 3 3 PAG2 Ethylene glycol monomethyl ether 10g 5g 85g 4 4 PAG1 Cyclohexanone 35g 5g 60g 5 5 PAG2 Ethylene glycol monomethyl ether 45g 5g 50g 6 6 PAG1 ethyl acetate 25g 5g 70g 7 7 PAG2 Dipropylene glycol monomethyl ether 30g 0.60g 69.40g 8 8 PAG1 Dipropylene glycol monomethyl ether 20g 3g 77g 9 9 PAG2 ethyl ace...

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Abstract

The invention discloses 248 nm thick film photoresist resin as well as a preparation method and application thereof. The preparation method of the photoresist composition comprises the following step:uniformly mixing all the components in the photoresist composition. The photoresist composition comprises the following components: a photoacid generator, resin and a solvent. An adhesive film formedby the photoresist composition provided by the invention has good performance and has a good application prospect.

Description

technical field [0001] The invention relates to a 248nm thick film photoresist resin and its preparation method and application. Background technique [0002] At present, in the field of semiconductor manufacturing, KrF light source thick-film photoresist is used in the chip manufacturing process of LCD (liquid crystal display) / BUMP bump / MEMS micro-electromechanical / 3D-NAND memory. This type of photoresist is different from conventional The KrF thin-layer photoresist is also different from the photoresist of the ArF light source, but has its own unique properties. [0003] Although integrated circuit semiconductor chip manufacturing technology is developing rapidly, the technology of thick-film photoresist for this kind of KrF light source is not fully mature, which is a hot field of research on KrF photoresist. [0004] KrF light source thick film photoresist currently has many problems, such as film cracking, poor film thickness uniformity, many defects, poor resolu...

Claims

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Application Information

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IPC IPC(8): G03F7/004
CPCG03F7/004G03F7/0045
Inventor 王溯方书农耿志月崔中越唐晨薛新斌王世建王志勇张君邵泽琨
Owner SHANGHAI SINYANG SEMICON MATERIALS
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