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Magnetic random access memory

A random access memory and magnetic technology, applied in the field of memory, can solve the problems such as the increase in the completion time of the write operation, the indeterminacy of the number of reads, and the impact on the writing speed, so as to reduce the writing power consumption, improve the writing speed, and shorten the writing time. effect of time

Pending Publication Date: 2022-04-22
SHANGHAI CIYU INFORMATION TECH CO LTD
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Problems solved by technology

However, to detect the state of the written bit at the same time as the write operation, there will be a certain proportion of MTJs that require a longer write time, which will affect the overall write speed
The direct post-verification method in the write operation needs to increase the read operation in the middle of the write operation. Although the time for each read can be relatively short, because the number of reads cannot be determined, it may eventually increase the time for the write operation to complete.

Method used

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Embodiment Construction

[0026] The following descriptions of the various embodiments refer to the accompanying drawings to illustrate specific embodiments in which the present invention can be practiced. The directional terms mentioned in the present invention, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "side", etc., are for reference only The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention.

[0027] The drawings and descriptions are to be regarded as illustrative in nature and not restrictive. In the figures, structurally similar units are denoted by the same reference numerals. In addition, the size and thickness of each component shown in the drawings are arbitrarily shown for understanding and ease of description, but the present invention is not limited thereto.

[0028] In the drawings, for clarity, understanding, and ease of descript...

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Abstract

The invention provides a magnetic random access memory, which is characterized in that when a write circuit provides a gradually increased line voltage and sets the line voltage to a bit line / source line of a selected unit, a write detection circuit detects the voltage change of the bit line / source line to form detection data, and the detection data is compared with data to be written; and determining whether to turn off the write driver corresponding to the selected unit line.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a magnetic random access memory and its writing circuit architecture. Background technique [0002] Magnetic random access memory (MRAM) MRAM needs to apply a current from the bit line to the source line to the MRAM during the write operation, and the MTJ is written in a p state (low resistance state); or the source line to the bit line is added to the MRAM. The current of MTJ is written as ap state (high resistance state). Due to the large write current, it takes a long time, generally 10nS-100nS. When MRAM is read, the current is small and the time is short, generally 1nS-10nS. Therefore, it is not easy to reduce the write current and write time of MRAM. Moreover, the current MRAM write power consumption is still relatively large, the write current is high, and the waste of energy is very large. For example: If you need to write 1 in a certain bit, half of the possibility of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16
CPCG11C11/1655G11C11/1657G11C11/1697G11C11/1675
Inventor 李志怀何伟伟戴瑾
Owner SHANGHAI CIYU INFORMATION TECH CO LTD
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