Memory device and initialization method thereof

Abstract

The invention provides a memory device and an initialization method thereof. The initialization method comprises the following steps of: performing power-on operation on the memory device so as to provide internal voltage for the memory array; and after the internal voltage is stable, carrying out refreshing operation on all the storage units.

Description

technical field [0001] The invention relates to a method for operating memory, in particular to a memory device and its initialization method. Background technique [0002] With the rapid development of current technology, semiconductor memory is widely used in electronic devices. For applications that require high speed and store large amounts of data, dynamic random access memory (DRAM) is the most commonly utilized solution. [0003] There are multiple storage cells in the DRAM. figure 1 It is a schematic circuit diagram of an existing storage unit. Such as figure 1 As shown, the memory cell 100 includes an N-type storage transistor ST. The drain of the storage transistor ST is coupled to the bit line BL. The gate of the storage transistor ST is coupled to the word line WL. The source of the storage transistor ST is coupled to one end of the storage capacitor Ccell. One end of the storage capacitor Ccell and the other end are coupled to a plate PLT. The node betwe...

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Problems solved by technology

In this way, when the storage transistor ST is turned on for the first time through the bit line WL, the noise from the cell plate PLT will become larger, and the potential of the storage node SN will shift, resulting in a decrease in read and write speed. , and increases the chance of data read and write errors

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