Three-dimensional memory and manufacturing method thereof

A memory, three-dimensional technology, applied in the direction of semiconductor devices, electrical solid devices, electrical components, etc., can solve the problems of difficult processing technology, large resistance, large resistance-capacitance delay, etc., and achieve the effect of reducing the difficulty of the process

Pending Publication Date: 2022-05-13
YANGTZE MEMORY TECH CO LTD
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when the thickness of the gate layer used for conduction becomes thinner, its resistance will increase, which in turn will result in a larger resistance-capacitance delay (RC delay)
In addition, when the thickness of the gate layer is con

Method used

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  • Three-dimensional memory and manufacturing method thereof
  • Three-dimensional memory and manufacturing method thereof
  • Three-dimensional memory and manufacturing method thereof

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[0031] For a better understanding of the application, various aspects of the application will be described in more detail with reference to the accompanying drawings. It should be understood that these detailed descriptions are descriptions of exemplary embodiments of the application only, and are not intended to limit the scope of the application in any way. Throughout the specification, the same reference numerals refer to the same elements. The expression "and / or" includes any and all combinations of one or more of the associated listed items.

[0032] It should be noted that in this specification, expressions of first, second, third, etc. are only used to distinguish one feature from another, and do not represent any limitation on the features. Therefore, the first stepped structure discussed below may also be referred to as the second stepped structure without departing from the teaching of the present application. vice versa.

[0033] In the drawings, the thickness, s...

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Abstract

The invention relates to a three-dimensional memory, a manufacturing method thereof and a storage device. The method includes: forming a first stack block; forming a first step structure on the first stacking block; forming a second stacking block on one side of the first stacking block along the stacking direction of the first stacking block; a first step structure is formed on the first stacking block, a second step structure is formed on the second stacking block, at least one of the first step structure and the second step structure comprises at least one pair of same-position steps, and the pair of same-position steps are arranged in the vertical plane in the stacking direction at intervals; and a plurality of conductive channels are formed on one side of the first step structure, the conductive channels are electrically connected with corresponding steps in the first step structure or the second step structure, and each pair of same-position steps are electrically connected with each other through the conductive channels.

Description

technical field [0001] The present application relates to the field of semiconductors, and more specifically, to a three-dimensional memory and a manufacturing method thereof. Background technique [0002] It is expected that the storage capacity of memory devices will gradually increase. However, some new problems may be encountered when increasing the storage capacity or storage density of a storage device, such as complex process, high manufacturing difficulty, and rising cost. [0003] As the number of stacked layers of the three-dimensional memory increases, in order to control the size of the three-dimensional memory and increase the storage density, the thickness of each layer can be selected to be thinned. However, when the thickness of the gate layer used for conduction becomes thinner, its resistance becomes larger, which in turn produces a larger resistance-capacitance delay (RC delay). In addition, when the thickness of the gate layer is controlled at a certain...

Claims

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Application Information

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IPC IPC(8): H01L27/11568H01L27/11575H01L27/11582
CPCH10B43/50H10B43/30H10B43/27
Inventor 王迪周文犀张中陈阳夏志良霍宗亮
Owner YANGTZE MEMORY TECH CO LTD
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