Glass passivation method for silicon mesa diodes

A mesa diode, glass passivation technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of increasing production costs and high equipment requirements, achieving low dependence, good graphics quality, and reduced process difficulty. Effect

Active Publication Date: 2016-04-06
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

The photolithography method simplifies the process steps of corroding the top glass after sintering, but it requires photolitho

Method used

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  • Glass passivation method for silicon mesa diodes
  • Glass passivation method for silicon mesa diodes
  • Glass passivation method for silicon mesa diodes

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0040] Example 1

[0041] In this embodiment, the glass passivation of the silicon mesa diode is performed with reference to the above method. Among them, the glass slurry is prepared as follows: ethyl cellulose is added to the butyl carbitol solution at a ratio of 1g:25ml, and after it is fully dissolved, it becomes the solvent for preparing the glass slurry, and the slurry solvent is mixed with the glass The powder is placed in an agate ball milling tank at a ratio of 1ml:2g for ball milling, the ball milling speed is 220 rpm, and the ball milling time is 8 hours to prepare glass slurry, and then the glass slurry is evenly coated on with a stainless steel scraper with a flat blade. On the silicon wafer with PN junction and chip mesa grooves, fill the mesa grooves with glass paste, use an infrared lamp to dry the above-mentioned glass paste coated wafers, and place the wafers on a flat quartz plate , Use a silica gel sticky roller to roll over the wafer evenly. The glass powder...

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PUM

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Abstract

The invention discloses a glass passivation method for silicon mesa diodes. The glass passivation method for silicon mesa diodes sequentially comprises the following steps: preparation of glass frit, glass coating, residual mesa top glass elimination, glass sintering and forming. The preparation proportion of the glass frit is optimized, mesa top glass is removed by an adhesion removal method, then a glass sintering process is carried out, difficulty of the process of eliminating the mesa top glass is reduced on the premise of achieving the ideal passivation effect, and the time of the process is shortened. According to a glass passivation device manufactured by the method, mesa top glass corrosion time can be shortened effectively, quality and precision of electrode window graphs are improved, the technology is simple and feasible, and production cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of silicon device surface passivation, and in particular relates to a glass passivation method for silicon mesa diodes. Background technique [0002] For silicon mesa diode devices, since the PN junction is exposed in the air, it is particularly sensitive to external influences, and surface contamination and surface charges will affect device parameters. The passivation film can passivate the active semiconductor Si surface, improve the performance of the device, strengthen the sealing of the device, shield the harmful effects of external impurities, ion charges, water vapor, etc. on the device, and enhance the stability and reliability of the device. [0003] Glass passivation technology is a process in which passivation glass powder is coated on the surface of a silicon device, and the glass dielectric film is formed by heating and sintering. The dielectric film formed by glass passivation has a dense str...

Claims

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Application Information

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IPC IPC(8): H01L21/56
CPCH01L21/561
Inventor 曹越顾晓春薛爱杰
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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