Forming method of three-dimensional phase change memory and three-dimensional phase change memory

Abstract

The embodiment of the invention provides a forming method of a three-dimensional phase change memory and the three-dimensional phase change memory, and the method comprises the steps: employing a plurality of initial etching patterns which extend along a first direction, and etching a first mask lamination layer, so as to form a first etching mask lamination layer; forming a second mask lamination layer on the surface of the first etching mask lamination layer; a plurality of secondary etching patterns extending in the second direction are adopted, the second mask lamination layer and the first etching mask lamination layer are etched in sequence, a secondary etching mask lamination layer is formed, and the secondary etching mask lamination layer is provided with latticed patterns; and etching the phase change storage unit lamination layer by taking the secondary etching mask lamination layer as a mask so as to form a columnar phase change storage unit.

Description

technical field [0001] The embodiment of the present application relates to the field of semiconductors, and relates to but not limited to a method for forming a three-dimensional phase-change memory and the three-dimensional phase-change memory. Background technique [0002] Phase change memory (Phase Change Memory, PCM) is a non-volatile solid-state storage technology that utilizes reversible, heat-assisted switching between states with different resistances of phase change materials. A phase-change material in a PCM cell can be located between two electrodes, and an electrical current can be applied to cause the phase-change material (or the portion of it that blocks the path of electrical current) to switch repeatedly between the two phases to store data. [0003] In a three-dimensional phase change memory (3D PCM), a memory chip is composed of many memory arrays with individual word lines (Word Line, WL) and bit lines (Bit Line, BL). Self-aligned PCM cells are formed a...

AI Technical Summary

Problems solved by technology

That is to say, as the number of 3DPCM stacks increases, the number of etching processes will increase exponentially, which greatly increases the manufacturing cost.

Images