Semiconductor device
A semiconductor and substrate technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problem that the improvement of the characteristics of semiconductor components is close to the limit, and achieve the effect of concentrated suppression of stress
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment approach 1
[0020] figure 1 and figure 2 It is a figure which shows the structure of the semiconductor device which concerns on Embodiment 1 of this invention. figure 1 is a top view of the semiconductor device, figure 2 This is a cross-sectional view of a corner portion of the semiconductor device. also, figure 2 corresponds to along figure 1 In the cross section of the line A1-A2 shown, the line A1-A2 is located on a straight line passing through the center O and the corners of the semiconductor device.
[0021] like figure 1 and figure 2 As shown, the semiconductor device according to Embodiment 1 includes a semiconductor substrate 10 , and electrodes 11 and wirings 12 made of metal formed on the semiconductor substrate 10 . In addition, on the surface of the semiconductor substrate 10 , a protective film made of polyimide or the like is formed, and the protective film includes a main protective film 20 covering at least a part of the electrodes 11 and the wirings 12 , and c...
Embodiment approach 2
[0031] Figure 5 It is a figure which shows the structure of the semiconductor device which concerns on Embodiment 2, and is a top view of this semiconductor device. In addition, the cross-sectional structure of the semiconductor device is the same as figure 2 same. like Figure 5 As shown, in Embodiment 2, the chamfered portion 20a of the main protective film 20 is formed in a curved shape (arc shape) along a circumference centered on the center O of the semiconductor substrate 10 in plan view.
[0032]The semiconductor device of the second embodiment also obtains the same effects as those of the first embodiment. In addition, since the chamfered portion 20a of the main protective film 20 is arc-shaped with the center O of the semiconductor substrate 10 as the center, the outer peripheral portion of the main protective film 20 is substantially parallel to the isostress surface, and it is also possible to make the chamfered portion 20a. The effect of uniformizing the stre...
Embodiment approach 3
[0035] In Embodiments 1 and 2, the material of the dummy protective film 21 is the same as that of the main protective film 20 (for example, polyimide, etc.), but in Embodiment 3, the material of the dummy protective film 21 is A material having a higher Young's modulus than the main protective film 20 . That is, in Embodiment 3, the Young's modulus of the dummy protective film 21 is higher than the Young's modulus of the main protective film 20 .
[0036] By forming the dummy protective film 21 from a material with a high Young's modulus, the rigidity of the dummy protective film 21 is increased, whereby the stress on the main protective film 20 can be effectively relieved. Thereby, compared with Embodiments 1 and 2, the effect that the stress applied to the main protective film 20 can be further relieved is obtained.
[0037] In this embodiment, as the material of the protective film, two types of materials having different Young's modulus from each other are required. As ...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More