Method for preparing SiCf/Si-Y-B-C composite material by combining vacuum impregnation with reactive melt impregnation
A technology of si-y-b-c and composite materials, applied in the field of composite materials, can solve the problems of matrix resistance to water and oxygen, poor water and oxygen resistance, high formation temperature, etc., to improve water and oxygen corrosion resistance, reduce fiber structure and performance effect, the effect of short preparation time
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Embodiment 1
[0040] Example 1. Sample with an infiltration temperature of 1300°C
[0041] Step 1. SiC f / SiC porous body preparation: A 500 nm-thick BN interfacial layer was deposited on the 2D stacked SiC fiber preform by the CVI process. The experiment used BCl 3 is boron source, NH 3 It is a nitrogen source, the deposition temperature is 650°C, and the pressure is 5kPa. Then a certain amount of SiC matrix is deposited by the CVI process, using trichloromethylsilane (CH 3 SiCl 3 , referred to as MTS) as the gas source, using Ar as the dilution gas, high-purity H 2 As the carrier gas for MTS, the deposition temperature is 1000 °C, the pressure is 5 kPa, and the prepared density is about 2.0 g / cm 3 Porous SiC f / SiC.
[0042] Step 2. Slurry preparation: Dissolve 1 wt.% CMC dispersant (sodium carboxymethyl cellulose) in distilled water and heat in a water bath (at a constant temperature of 80° C.) to prepare a dispersion solution. After the solution was cooled, 40wt.% B was added...
Embodiment 2
[0045] Example 2. Sample with an infiltration temperature of 1400°C
[0046] Step 1. SiC f / SiC porous preform preparation: A 500 nm-thick BN interfacial layer was deposited on the 2D stacked SiC fiber preform using the CVI process. The experiment used BCl 3 is boron source, NH 3 It is a nitrogen source, the deposition temperature is 650°C, and the pressure is 5kPa. Then a certain amount of SiC matrix is deposited by the CVI process, using trichloromethylsilane (CH 3 SiCl 3 , referred to as MTS) as the gas source, using Ar as the dilution gas, high-purity H 2 As the carrier gas for MTS, the deposition temperature is 1000 °C, the pressure is 5 kPa, and the prepared density is about 1.9 g / cm 3 Porous SiC f / SiC.
[0047] Step 2. Slurry preparation: Dissolve 1 wt.% CMC dispersant (sodium carboxymethyl cellulose) in distilled water and heat in a water bath (at a constant temperature of 80° C.) to prepare a dispersion solution. After the solution was cooled, 30wt.% of B ...
Embodiment 3
[0050] Example 3. Sample with an infiltration temperature of 1500°C
[0051] Step 1. SiC f / SiC porous body preparation: A 500 nm-thick BN interfacial layer was deposited on the 2D stacked SiC fiber preform by the CVI process. The experiment used BCl 3 is boron source, NH 3 It is a nitrogen source, the deposition temperature is 650°C, and the pressure is 5kPa. Then a certain amount of SiC matrix is deposited by the CVI process, using trichloromethylsilane (CH 3 SiCl 3 , referred to as MTS) as the gas source, using Ar as the dilution gas, high-purity H 2 As the carrier gas for MTS, the deposition temperature is 1000°C, the pressure is 5kPa, and the prepared density is about 2.1g / cm 3 Porous SiC f / SiC.
[0052] Step 2. Slurry preparation: Dissolve 1 wt.% CMC dispersant (sodium carboxymethyl cellulose) in distilled water and heat in a water bath (at a constant temperature of 80° C.) to prepare a dispersion solution. After the solution was cooled, 30wt.% of B was added...
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