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Epitaxial tray for improving temperature uniformity of substrate

A technique for substrate temperature and uniformity

Pending Publication Date: 2022-07-01
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the epitaxial growth process, the round edge of the substrate will be in contact with the edge in the front groove of the epitaxial tray, so that the temperature of the round edge of the substrate is high, and the temperature of the center of the substrate is low. uneven

Method used

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  • Epitaxial tray for improving temperature uniformity of substrate
  • Epitaxial tray for improving temperature uniformity of substrate
  • Epitaxial tray for improving temperature uniformity of substrate

Examples

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Embodiment Construction

[0026] In order to make the objectives, technical solutions and advantages of the present disclosure clearer, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0027] Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," "third," and similar terms used in the description and claims of the presently disclosed patent application do not denote any order, quantity, or importance, but are merely used to distinguish the different components . Likewise, "a" or "an" and the like do not denote a quantitative limitation, but rather denote the presence of at least one. Words like "including" or "comprising" mean that the elements or items listed before "including" or "including" cover the elements or items listed after "including" or "including" and t...

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Abstract

The invention discloses an epitaxial tray for improving temperature uniformity of a substrate, and belongs to the technical field of epitaxial growth. The epitaxial tray is cylindrical, the epitaxial tray comprises a first surface and a second surface which are parallel to each other and opposite to each other, the epitaxial tray is provided with a plurality of concentric substrate placing rings on the first surface, and each substrate placing ring comprises a plurality of circular grooves which are uniformly distributed in the circumferential direction of the epitaxial tray; the bottom face of the circular groove is provided with concentric annular supporting protrusions. A plurality of concentric adjusting rings are arranged on the second surface of the extension tray, each adjusting ring comprises circular adjusting grooves evenly distributed in the circumferential direction of the extension tray, the diameter of each circular adjusting groove is smaller than the inner diameter of the annular supporting protrusion, and the circle center of the orthographic projection of each circular adjusting groove on the first surface coincides with the circle center of the bottom face of one circular groove. The temperature difference between the circle center part of the substrate and the edge part of the substrate is reduced, and the temperature is more uniform.

Description

technical field [0001] The present disclosure relates to the technical field of epitaxial growth, and in particular, to an epitaxial tray for improving substrate temperature uniformity. Background technique [0002] The epitaxial tray is a part of a metal-organic chemical vapor deposition (English: Metal-organic Chemical Vapor Deposition, MOCVD for short) equipment, and the epitaxial tray is usually located in a reaction chamber of the MOCVD equipment. The epitaxial tray is usually a cylinder, and an end face of one end of the epitaxial tray is provided with a plurality of concentric substrate placement rings, each of which includes a plurality of circular grooves uniformly distributed along the circumference of the epitaxial tray. The end face of the other end of the epitaxial tray is connected with the driving structure of the MOCVD equipment. [0003] When preparing an epitaxial wafer, the substrates need to be placed in each circular groove in a one-to-one correspondenc...

Claims

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Application Information

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IPC IPC(8): C30B25/12C30B25/10C23C16/458C23C16/48
CPCC30B25/12C30B25/105C23C16/4586C23C16/481
Inventor 蒋媛媛纪磊胡烨伟
Owner HC SEMITEK ZHEJIANG CO LTD