3results about How to "Raise the temperature difference" patented technology

The invention discloses a small nuclear energy underwater unmanned equipment system capable of realizing efficient power generation based on energy storage, which comprises a nuclear reactor system, a heat storage unit and a supercritical carbon dioxide Brayton cycle power system, the temperature difference between the tanks is increased through a heat storage and recovery mechanism; nuclear energy released by the nuclear reactor system is transmitted to the supercritical carbon dioxide Brayton cycle power system through the heat storage unit, and energy conversion is completed through cooperative work of a heater, a steam turbine, a heat regenerator, a precooler and a gas compressor; through the nuclear-storage-circulation coupling design, the core requirements of light weight, long service life and intelligent control of underwater unmanned equipment can be met, and a power technical support is provided for ocean strong national construction.

The application provides a semiconductor device and a preparation method thereof, which comprises a substrate, a bit line structure and a gate structure, the substrate comprises a core area and a peripheral area, a plurality of word lines are formed in the core area of the substrate; the bit line structure is located on the core area of the substrate, the bit line structure comprises a first semiconductor layer, a first metal layer and a first amorphous silicon layer which are stacked from bottom to top, and at least part of the first semiconductor layer is located in the substrate between two adjacent word lines; the gate structure is located on the peripheral area of the substrate, and the gate structure comprises a second semiconductor layer. The application can improve the temperature difference between the core area and the peripheral area, so as to improve the performance of the semiconductor device.

A stepped main heater for a single crystal furnace comprises a plurality of heating assemblies distributed in the circumferential direction of the single crystal furnace, gaps exist between the adjacent heating assemblies, a heating space is defined by all the heating assemblies, and each heating assembly comprises an upper heating plate and a lower heating plate which are distributed up and down. The upper heating plate and the lower heating plate are fixedly connected through at least one transition heating plate, all the transition heating plates surround to form a transition heating area, the space of the transition heating area is gradually reduced from top to bottom to form a stepped transition heating area, and the structure can be far away from a solid-liquid interface, so that the temperature gradient is more linear. Part of two adjacent lower heating plates are fixedly connected through a bottom heating plate, and the bottom heating plate extends towards the heating space. The temperature of the bottom of the molten silicon is improved, so that the temperature difference between the upper part and the lower part of the molten silicon can be improved, the temperature gradient in the whole molten silicon is remarkably improved, and the crystal defect caused by insufficient temperature gradient in the drawing process is reduced.