Micromachined thermopile infrared detector
An infrared detector and thermopile technology, applied in the field of infrared detectors, can solve the problems of increased temperature difference between the hot junction area and the cold junction area, lower detection sensitivity of the detector, complicated process, etc., and achieve high yield and good quality Development prospects, the effect of simple production process
An infrared detector and thermopile technology, applied in the field of infrared detectors, can solve the problems of increased temperature difference between the hot junction area and the cold junction area, lower detection sensitivity of the detector, complicated process, etc., and achieve high yield and good quality Development prospects, the effect of simple production process
CN101575083AActive Publication Date: 2009-11-11ZHONGBEI UNIV
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[0023] The thermopile infrared detector is made according to the following method:
[0024] ①. At a temperature of 940°C, adjust the flow rate of the reaction gas source, and deposit low-stress silicon nitride films 2 on the front and back sides of the double-sided polished p-type high-resistance silicon substrate 1, respectively, by LPCVD. 3. No need for high temperature annealing; see figure 1 as shown in a;
[0025] ②. Using photolithography and etching processes to remove the peripheral silicon nitride film on the front side of the silicon substrate 1, and retain the silicon nitride film 2 in the central area; see figure 1 b, as shown in 2;
[0026] ③. Deposit a polysilicon layer on the surface of the silicon nitride film 2 in the central area of the front side of the silicon substrate 1 and the surface of the peripheral silicon substrate by LPCVD, and then use photolithography and dry etching to form a number of ends on the silicon nitride film 2, The other end is lo...
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The invention relates to the field of an infrared detector, in particular to a micromachined thermopile infrared detector. The manufacturing technique is simplified and the performance and finished product rate are improved. The manufacture of the micromachined thermopile infrared detector comprises the following steps of: (1) depositing silicon nitride film on the both sides of a silicon substrate by an LPCVD method; (2) etching to remove peripheral silicon nitride film on the frontal side of the silicon substrate by lithography; (3) manufacturing a plurality of Poly-Si strips both ends of which are respectively arranged on the silicon nitride film and the silicon substrate by LPCVD method and photolithographic process; (4) manufacturing a plurality of aluminum strips which form a thermocouple with the plurality of Poly-Si strips by sputtering and photolithographic processes; (5) depositing the silicon nitride film on the frontal side of the silicon substrate by PECVD method; (6) manufacturing an infrared absorption layer (a carbonized photoresist layer) covering the hot junction area of the thermopile with photolithographic process; (7) manufacturing a metal reflective layer (a metal layer) covering the cold junction area of the thermopile with lift-off process; and (8) eroding the back side of the silicon substrate to form a square frustum pyramid shaped groove. The micromachined thermopile infrared detector has reasonable structure design, simple manufacturing process, high detector performance, high finished product rate, good development prospect and is easy to realize.
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technical field [0001] The invention relates to the field of infrared detectors, in particular to a micromechanical thermopile infrared detector. Background technique [0002] At present, infrared technology is widely used in civilian fields such as infrared temperature measurement, infrared alarm, and infrared detection, as well as military fields such as infrared imaging, infrared guidance, and infrared early warning; the core of infrared technology is infrared detectors. Among them, the thermopile infrared detector, which is an uncooled infrared detector, has many advantages and is widely used. With the development of MEMS microelectromechanical systems, since the 1980s, micromechanical thermopile infrared detectors have emerged as the times require, and after years of research and practice, they have been successfully used in civilian and military fields. [0003] Most of the existing micromechanical thermopile infrared detectors use silicon nitride-silicon oxide compos...
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Patent Timeline
11 Nov 2009
Publication
CN101575083A
- IPC
- B81C1/00; B81B7/02; G01J5/12
- Inventors
- 薛晨阳; 梁庭