Bonding method of semiconductor

Abstract

The invention discloses a semiconductor bonding method which comprises the following steps: loading a semiconductor on a clamp in a vacuum chamber, and continuously introducing nitrogen into the vacuum chamber; wherein the temperature of the clamp is stabilized between 80 DEG C and 120 DEG C, and the flow rate of the nitrogen is 2.5 L / min to 5.0 L / min; carrying out first-time bonding treatment on the semiconductor through the laser emitting device; wherein the first working voltage of the laser emitting device ranges from 2.5 V to 3.5 V, and the first working time ranges from 1.5 S to 2.0 S; carrying out secondary bonding treatment on the semiconductor through the laser emitting device; wherein the second working voltage of the laser emitting device is smaller than the first working voltage, the second working voltage ranges from 2.0 V to 3.0 V, and the second working time ranges from 0.2 S to 0.3 S; carrying out third-time bonding treatment on the semiconductor through the laser emitting device; wherein the third working voltage of the laser emitting device is smaller than 1.2 V, and the third working time is 0.2 S. According to the technical scheme, the semiconductor can be gradually cooled during bonding, the semiconductor is prevented from being damaged, and therefore the product quality is improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular, to a method for bonding semiconductors. Background technique [0002] During the processing of semiconductor wafers, semiconductor products are usually bonded to a fixture for inspection. There are soldering points and lines on the fixture, and the contact points of the semiconductor are in contact with the soldering points on the fixture to complete various performance tests. [0003] In the past welding process, the fixture is usually heated, the solder joint is melted, and then the semiconductor is bonded. However, because the temperature of the fixture and the semiconductor drops too fast, the thermal expansion and cold contraction of the semiconductor in a short period of time often cause damage, resulting in The product is abnormal, which affects the quality of the product. SUMMARY OF THE INVENTION [0004] The technical problem to be solve...

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Problems solved by technology

[0003] In the past welding process, the fixture is usually heated to melt the solder joints, and then the semiconductor is bonded. However, because the temperature of the fixture and the semiconductor drops too fast, the thermal expansion and contraction of the semiconductor in a short period of time often cause damage, resulting in The product is abnormal, which affects the product quality

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