Infrared quantum dot layer, preparation method of infrared quantum dot layer, infrared photosensitive element and preparation method of infrared photosensitive element
A quantum dot layer and photosensitive element technology, applied in the field of photoelectric sensors, can solve the problems of loss of photoelectric response, reduction of material quantum yield, surface defects, etc., and achieve the effect of improving carrier mobility, good photoelectric response, and high quantum yield
Pending Publication Date: 2022-07-05
BEIJING INSTITUTE OF TECHNOLOGYGY
View PDF0 Cites 1 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
The number of ligand substitutions by the solid ligand exchange method is limited, the degree of increase in carrier mobility is limited, and a large number of cavities will be formed on the surface of the quantum dot film, resulting in surface defects; the number of ligand substitutions by the traditional liquid phase ligand exchange method is even greater. However, this method usually involves annealing, which will cause the quantum dots to partially lose quantum confinement, reduce the quantum yield of the material, and lose the photoelectric response.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0057] In order to more clearly understand the above objects, features and advantages of the present disclosure, the solutions of the present disclosure will be further described below. It should be noted that the embodiments of the present disclosure and the features in the embodiments may be combined with each other under the condition of no conflict.
[0058] Many specific details are set forth in the following description to facilitate a full understanding of the present disclosure, but the present disclosure can also be implemented in other ways different from those described herein; obviously, the embodiments in the specification are only a part of the embodiments of the present disclosure, and Not all examples.
[0059] figure 1 A schematic flowchart of a method for preparing an infrared quantum dot layer provided in an embodiment of the present disclosure. like figure 1 As shown, the preparation method of the infrared quantum dot layer may include:
[0060] S101 , pr...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to an infrared quantum dot layer and a preparation method thereof, and an infrared photosensitive element and a preparation method thereof. The preparation method of the infrared quantum dot layer comprises the following steps: preparing preset quantum dots, a non-polar long-chain ligand solution, a polar short-chain ligand solution and a solid ligand solution; wherein the preset quantum dots are dissolved in the non-polar long-chain ligand solution; mixing the non-polar long-chain ligand solution in which the preset quantum dots are dissolved with the polar short-chain ligand solution, so that the quantum dots are transferred to the polar short-chain ligand to form a preset solution; adopting a preset solution to form a preset film layer; and performing solid ligand method treatment on the preset film layer by using the solid ligand liquid, passivating a defect state on the surface of the preset film layer, and forming the infrared quantum dot layer. According to the technical scheme, the mobility of carriers in the infrared quantum dot layer and the photoelectric response efficiency of the infrared photosensitive element are improved.
Description
technical field [0001] The present disclosure relates to the technical field of photoelectric sensors, and in particular, to an infrared quantum dot layer and a preparation method thereof, an infrared photosensitive element and a preparation method thereof. Background technique [0002] High-performance infrared detectors are usually used as core components in the fields of meteorological remote sensing, military reconnaissance and space exploration because they can realize long-distance and all-weather identification of infrared information of objects. Infrared detectors sensitive to this band are mainly based on single crystals of indium antimonide (InSb) and mercury cadmium tellurium (HgCdTe). The process is also extremely complex, further increasing the cost and limiting the application of the detector. [0003] In response to this, people have researched alternatives such as quantum dot infrared detectors, quantum well infrared detectors, III-V semiconductor class II s...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): C09K11/02C09K11/89B82Y20/00B82Y30/00B82Y40/00H01L31/0352H01L31/101H01L31/18
CPCC09K11/02C09K11/892B82Y20/00B82Y30/00B82Y40/00H01L31/035218H01L31/101H01L31/18H01L31/1828
Inventor 陈梦璐郝群唐鑫薛晓梦罗宇宁
Owner BEIJING INSTITUTE OF TECHNOLOGYGY