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GaN HEMT direct current I-V temperature model building method based on global sensitive parameters

A technology for sensitive parameters and model building, applied in the field of power electronics

Pending Publication Date: 2022-07-12
HANGZHOU DIANZI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The invention discloses a method for establishing a GaN HEMT DC I-V temperature model based on global sensitive parameters, aiming to solve the technical problems existing in the prior art

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  • GaN HEMT direct current I-V temperature model building method based on global sensitive parameters
  • GaN HEMT direct current I-V temperature model building method based on global sensitive parameters
  • GaN HEMT direct current I-V temperature model building method based on global sensitive parameters

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Embodiment Construction

[0037] In order to make the objectives, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the corresponding drawings. In the description of the present invention, it should be noted that the term "or" is generally used in its sense including "and / or" unless the content clearly dictates otherwise.

[0038] In the description of the present invention, it should be noted that the terms "installed", "connected" and "connected" should be understood in a broad sense, unless otherwise expressly specified and limited, for example, it may be a fixed connection or a detachable connection Connection, or integral connection; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be internal communicati...

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Abstract

The invention relates to a GaN HEMT direct current I-V temperature model establishing method based on global sensitive parameters, which comprises the following steps: firstly, selecting a GaN HEMT direct current I-V normal temperature model, determining fitting parameters at each temperature through nonlinear fitting, then calculating global sensitive parameters of each parameter and selecting relatively sensitive parameters, and finally establishing a GaN HEMT direct current I-V normal temperature model. And then establishing a relationship between the sensitive parameter and the temperature, and finally replacing a constant in the GaN HEMT direct current I-V normal temperature model so as to establish a GaN HEMT direct current I-V temperature model. Through the method, which parameters in the temperature model are greatly influenced by the temperature can be accurately judged, a relation between the parameters and the temperature is constructed by using a polynomial, and then the relation is substituted into a direct current I-V normal temperature model, so that a high-precision GaN HEMT direct current I-V temperature model is established.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a method for establishing a DC I-V temperature model of a GaN HEMT based on global sensitive parameters. Background technique [0002] As one of the III-V, wide bandgap semiconductor materials, gallium nitride (GaN) has the characteristics of high critical breakdown electric field, high electron mobility, high heat capacity, high thermal conductivity, low resistivity, etc. The semiconductor power device of the material can meet the application scenarios of high power, high frequency and high temperature in the field of microwave and radio frequency as well as in the field of power electronic power conversion. [0003] Gallium Nitride High Electron Mobility Transistor (GaN HEMT) is one of the most important devices in the third-generation semiconductor devices. Due to its advantages such as wide band gap, high electron saturation velocity, high electron mobility, and hig...

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Application Information

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IPC IPC(8): G06F30/20G06F17/11
CPCG06F30/20G06F17/11
Inventor 刘艳黄昌洋程知群王涛陈思敏
Owner HANGZHOU DIANZI UNIV