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Polymorphic pulsing for balancing between arcuate control and mask selection

A pulse and mask technology, applied in the field of multi-state pulsed systems, can solve the problem of not realizing the ideal selectivity of semiconductor wafers, and achieve the effect of increasing mask selectivity

Pending Publication Date: 2022-07-22
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when semiconductor wafers are etched, the ideal selectivity associated with semiconductor wafers is not achieved

Method used

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  • Polymorphic pulsing for balancing between arcuate control and mask selection
  • Polymorphic pulsing for balancing between arcuate control and mask selection
  • Polymorphic pulsing for balancing between arcuate control and mask selection

Examples

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Embodiment Construction

[0052] The following embodiments describe systems and methods for polymorphic pulsing to achieve a balance between bow control and mask selectivity. Obviously, the present embodiments may be practiced without some or all of these specific details. In other instances, well-known process operations have not been described in detail so as not to unnecessarily obscure the embodiments of the invention.

[0053] 1 is a schematic diagram of an embodiment of a system 100 for illustrating tri-state pulsing of multiple radio frequency (RF) signals to achieve a balance between bow control and mask selectivity. The system 100 includes an RF generator RFGx, another RF generator RFGy, an impedance matching network IMN, a plasma chamber 106 and a host computer 110 .

[0054] An example of an RF generator RFGx is a low frequency RF generator, such as an RF generator having an operating frequency of 400 kilohertz (kHz) or 2 megahertz (MHz) or 13.56 MHz. An example of an RF generator RFGy is ...

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Abstract

A method for polymorphic pulsing to achieve a balance between bow control and mask selectivity is described. The method includes generating a primary radio frequency (RF) signal. The primary RF signal is pulsed in three states including a first state, a second state, and a third state. The method further includes generating a secondary RF signal. The secondary RF signal is pulsed between three states. During the first state, a power level of the primary RF signal is greater than a power level of the secondary RF signal. Further, during the second state, a power level of the secondary RF signal is greater than a power level of the primary RF signal. During the third state, the power levels of the primary and secondary RF signals are substantially equal.

Description

technical field [0001] Embodiments described in this disclosure relate to systems and methods for polymorphic pulsing that achieves a balance between bow control and mask selectivity. Background technique [0002] The background description provided herein is for the purpose of generally presenting the context of the disclosure. The work of the presently named inventors is neither expressly nor implicitly acknowledged as prior art to the present disclosure to the extent that it is described in this Background section and in aspects of the specification that were not identified as prior art at the time of filing the application. technology. [0003] A radio frequency (RF) generator generates an RF signal and provides the RF signal to the plasma reactor through matching. The plasma reactor has a semiconductor wafer that is etched when an RF signal is supplied and an etchant gas is supplied to the plasma reactor. However, when the semiconductor wafer is etched, the desired s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/311H01J37/32
CPCH01L21/31116H01L21/31144H01J37/32146H01J37/32165H01J37/32174H01J2237/3346H01L21/3065H01J2237/334H01J37/32183
Inventor 尼基尔·多乐梅雷特·廷洛克·王埃里克·赫德森姚小强李尚宪
Owner LAM RES CORP