Thin film transistor, memory, manufacturing method and electronic equipment
A technology of thin film transistor and memory, applied in the fields of electronic equipment, thin film transistor, memory and manufacturing method, can solve the problems of low area utilization rate, large size of thin film transistor 10, unfavorable wiring and the like
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Embodiment 1
[0268] For example make Figure 8a The thin film transistor 10 shown specifically includes the following steps:
[0269] S100, such as Figure 19 As shown, a stacked first conductive film 1090 , a first dielectric film 1130 and a second conductive film 1080 are sequentially formed on the substrate 101 .
[0270] Here, the first conductive film 1090 , the first dielectric film 1130 and the second conductive film 1080 may be sequentially formed by chemical vapor deposition, physical vapor deposition, sputtering, electroplating and other methods.
[0271] S101, such as Figure 19 As shown, the first conductive film 1090, the first dielectric film 1130 and the second conductive film 1080 are patterned to form the first electrode 109, the first dielectric layer 113 and the second electrode 108 stacked in sequence; wherein, the first electrode 109 , the first dielectric layer 113 and the second pole 108 form a groove structure.
[0272] Here, the first conductive film 1090, the ...
Embodiment 2
[0282] For example make Figure 9 The thin film transistor 10 shown specifically includes the following steps:
[0283] S110, such as Figure 20As shown, a stacked first conductive film 1090 , a first dielectric film 1130 and a second conductive film 1080 are sequentially formed on the substrate 101 .
[0284] Here, for the specific implementation process of this step S110, reference may be made to the above-mentioned step S100, which will not be repeated here.
[0285] S111, such as Figure 20 As shown, the first conductive film 1090, the first dielectric film 1130 and the second conductive film 1080 are patterned to form the first electrode 109, the first dielectric layer 113 and the second electrode 108 stacked in sequence; wherein, the first electrode 109 , the first dielectric layer 113 and the second pole 108 form a groove structure.
[0286] Here, for the specific implementation process of this step S111, reference may be made to the foregoing step S101, which will ...
Embodiment 3
[0294] For example make Figure 10 The thin film transistor 10 shown specifically includes the following steps:
[0295] S120, such as Figure 21 As shown, a stacked first conductive film 1090 , a first dielectric film 1130 and a second conductive film 1080 are sequentially formed on the substrate 101 .
[0296] Here, for the specific implementation process of this step S120, reference may be made to the above-mentioned step S100, which will not be repeated here.
[0297] S121, such as Figure 21 As shown, the first conductive film 1090, the first dielectric film 1130 and the second conductive film 1080 are patterned to form the first electrode 109, the first dielectric layer 113 and the second electrode 108 stacked in sequence; wherein, the first electrode 109 , the first dielectric layer 113 and the second pole 108 form a groove structure.
[0298] Here, for the specific implementation process of this step S121, reference may be made to the foregoing step S101, which wil...
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