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Image sensor

An image sensor, photodiode technology, applied in semiconductor devices, electric solid state devices, radiation control devices, etc., can solve problems such as distortion, missing scene details, blurring, etc.

Pending Publication Date: 2022-07-29
VISERA TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, traditional image sensors suffer from missing scene details or blurring or severe distortion due to limited dynamic range

Method used

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Embodiment Construction

[0027] The image sensor according to the embodiment of the present invention is described in detail below. For the purposes of explanation, numerous specific details and embodiments are set forth in the following detailed description to provide a thorough understanding of embodiments of the present invention. The specific elements and configurations described in the following detailed description are used to clearly describe the embodiments of the present invention. However, the exemplary embodiments described herein are obviously used for illustration only, and the concepts of the embodiments of the present invention may be embodied in various forms and are not limited to these exemplary embodiments.

[0028] Furthermore, to clearly describe the embodiments of the present invention, similar and / or corresponding numerals may be used in the drawings of different embodiments to represent similar and / or corresponding elements. However, it is not intended that there is any associ...

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Abstract

The embodiment of the invention provides an image sensor. The image sensor comprises a substrate, a first photodiode, a second photodiode, an intermediate layer, a light guide structure and a micro lens layer. The first photodiodes and the second photodiodes are alternately arranged in the substrate. The area of each first photodiode in an upper view is smaller than the area of each second photodiode. The intermediate layer is disposed on the substrate. The light guide structure is disposed in the intermediate layer and over at least one of the first photodiode and the second photodiode. The refractive index of the light guide structure is greater than that of the intermediate layer. The microlens layer is disposed on the intermediate layer.

Description

technical field [0001] Embodiments of the present invention relate to an image sensor, and more particularly, to an image sensor with a light guide structure. Background technique [0002] Image sensors such as complementary metal oxide semiconductor image sensors (CIS) are widely used in various image capture devices such as digital still-image cameras and digital video camera etc. The photosensitive portion of the image sensor can detect the surrounding color changes, and can generate signal charges depending on the amount of light received by the photosensitive portion. In addition, the signal charges generated in the photosensitive portion can be transferred and amplified to obtain image signals. [0003] Image sensors should be able to capture images quickly, and the accuracy, spatial resolution, and dynamic range should be as high as possible. However, conventional image sensors suffer from missing scene details or blurring or severe distortion due to limited dynami...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14621H01L27/14627H01L27/14605H01L27/14643H01L27/14625H01L27/14603
Inventor 张原硕吴庆强
Owner VISERA TECH CO LTD