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Interconnection mechanism for semiconductor packages

A technology of semiconductors and components, applied in the direction of semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve the problem of not pointing out

Inactive Publication Date: 2004-06-09
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

can cause serious problems when patterning the metal layer later
There is currently no known technical solution to this problem, or even to point it out

Method used

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  • Interconnection mechanism for semiconductor packages
  • Interconnection mechanism for semiconductor packages
  • Interconnection mechanism for semiconductor packages

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Embodiment Construction

[0032] The present invention discloses a new and more reliable inline mechanism for semiconductor components. The improved inline mechanism eliminates or at least reduces the problems caused by induced stress migration by adding a plurality of spaced apart heat-resistant plugs along the aluminum wire. The antithermal plug acts as an atom storage tank, or functionally, as a stress suppressor to prevent aluminum atoms from flowing into the via opening and causing the via to bulge. As mentioned above, the inventors of the present invention have found that when the semiconductor component is subjected to a rapidly rising or falling temperature change impact, such as in processes such as WCVD, PECVD, and via outgassing, if the aluminum wire is long enough and thin enough, then The triaxial stress, which is inversely proportional to the width of the aluminum wire, becomes so large that a significant amount of aluminum atoms or defects are pushed into the via opening and cause a prot...

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Abstract

An interconnection mechanism for semiconductor assembly parts includes aluminum wire and tungsten plug. The thin and long aluminium wire connects to a first metal structure. The one ends of multiple distant tungsten plugs are conencted to the said aluminum wire and the other ends of these tungsten plugs are embedded to a bottom dielectric layer, making the other ends of the tungsten plugs insulated. When the interconnection mechanism undergoes fast temperature change, the tungsten plugs can absorb the aluminium atoms produced by the migration of induced stress so as to prevent medium windows from bulging. Bulges will hurt the second metal structure above the first metal structure.

Description

technical field [0001] The present invention relates to an inline mechanism for semiconductor components which eliminates or reduces the problems caused by the migration of so-called induced stresses in order to improve the reliability of semiconductor components and their manufacturing methods. This improved inline mechanism can eliminate or reduce the yield of products related to mass transfer of atoms, vacancies, or defects when semiconductor components are subjected to rapid temperature rises or falls, resulting in stress-induced migration question. The inline mechanism of the present invention is advantageously used in the manufacture of ultra large scale integration (ULSI) semiconductor packages. Background technique [0002] The fabrication of ultra-large scale integrated (ULSI) circuits, vertical stacking, or integration of metal wire circuits or metal layers to form multiple interconnect structures has become an effective method for increasing circuit performance a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/52
Inventor 林啟发
Owner WINBOND ELECTRONICS CORP