54 results about "Aluminium atom" patented technology

The invention belongs to the technical field of electrode material preparation, and particularly relates to a preparation method of boric acid-assisted low-temperature sintered porous aluminum foil. The preparation method comprises the following steps: dispersing aluminum powder, boric acid and binder raw materials in a solvent to form dispersed slurry; and coating a matrix with the dispersed slurry, drying, sintering at 450-600 DEG C under protective gas, reacting boric acid with aluminum oxide on the surface of the aluminum powder to form low-melting-point aluminoborate, reducing the sintering temperature, promoting aluminum atom diffusion, increasing sintering neck formation, and sintering to obtain the porous aluminum foil. Boron oxide generated by decomposition of boric acid is added to react with aluminum oxide to form low-melting-point aluminoborate, the sintering liquidus temperature is reduced, aluminum atom diffusion is promoted, and low-temperature sintering at 450-600 DEG C is achieved. The aluminum powder sintered foil is suitable for energy storage devices such as an aluminum electrolytic capacitor and a lithium ion battery, has the advantages of low-temperature energy conservation, high porosity and strong mechanical property, and solves the problems of aluminum oxide obstruction and high high-temperature energy consumption of the traditional aluminum powder sintered foil.

The invention relates to the technical field of semiconductor electronic devices, and discloses an aluminum-based quantum well laser and an in-situ interface processing method thereof. After a low-aluminum active region with a strain compensation structure is grown and before a high-aluminum electron barrier layer is grown, the in-situ interface treatment method comprises the following steps: maintaining the temperature of a substrate at a first temperature for a first time in a V-group source atmosphere; reducing the temperature of the substrate from the first temperature to a third temperature, and introducing an aluminum source to perform strain surface pre-adsorption; introducing an aluminum source and other III-group sources except the aluminum source to grow a high-aluminum nucleating layer; and raising the temperature of the substrate from the third temperature to a fourth temperature, and growing the main body part. According to the in-situ interface processing method, the low-defect interface is obtained through the steps of strain surface relaxation, aluminum atom pre-adsorption, low-temperature nucleation and solid-state epitaxial conversion, lattice connection is achieved between the high-aluminum electron barrier layer and the low-aluminum active area with the strain compensation structure below, and the defect density of the interface is effectively reduced.

The invention belongs to the field of molecular sieve material characterization, and particularly relates to a method for analyzing aluminum atom pairs in a ZSM-5 molecular sieve based on super-resolution fluorescence microscopic imaging, which comprises the following steps: activating a ZSM-5 molecular sieve sample; contacting the obtained sample with probe molecules; washing the ZSM-5 molecular sieve sample, and removing unbound or nonspecifically bound probe molecules; imaging the marked sample by using a super-resolution fluorescence microscope to obtain an image sequence containing a single fluorescent molecule emission event; processing the image sequence, determining a space coordinate of each fluorescence event, and reconstructing a super-resolution fluorescence image exceeding an optical diffraction limit; and based on the space coordinates of the fluorescent dots in the super-resolution fluorescence image, carrying out statistics to obtain the position, surface density or distribution information of the aluminum atom pairs in the ZSM-5 molecular sieve. According to the method disclosed by the invention, nanoscale spatial resolution, direct imaging and quantitative analysis of Al-pair in ZSM-5 (Zeolite Socony Mobil-5) can be realized.

The invention discloses a method for researching the corrosion resistance behavior of zinc alloy based on a first principle. The method comprises the following steps: firstly, retrieving a zinc primitive cell model from a material database and carrying out structure optimization; performing crystal face cutting, cell expansion and re-structure optimization to obtain a zinc plate model; then aluminum atom random replacement doping processing is carried out, and optimization is carried out to obtain a doping model; performing static self-consistent calculation to obtain surface energy, and screening out the most stable doping model; fixing two layers of atoms at the bottom of the most stable doping model, performing chloride ion adsorption calculation and structure optimization, and calculating adsorption energy to determine a most stable adsorption site; and finally, carrying out electronic structure calculation of state density and a work function, and representing the corrosion resistance of the zinc alloy. According to the method, a zinc alloy corrosion micromechanism is deeply analyzed, theoretical guidance is provided for component optimization and corrosion resistance improvement, and compared with a traditional experimental method, the research and development cost and time are remarkably reduced, the research efficiency is improved, and the method has important theoretical and practical application value.

The invention provides a multi-resistance-state ferroelectric memristor and a preparation method thereof.The multi-resistance-state ferroelectric memristor comprises a bottom electrode, a ferroelectric layer and a top electrode which are sequentially arranged in a stacked mode from bottom to top, the ferroelectric layer comprises at least two layers of aluminum scandium nitride thin films, and in the different layers of aluminum scandium nitride thin films, the number of the aluminum scandium nitride thin films is larger than the number of the aluminum scandium nitride thin films. The ratio of scandium atoms to aluminum atoms is gradually increased along with the number of layers from bottom to top. In each layer of aluminum scandium nitride film, the number of scandium atoms is gradually increased from bottom to top to form gradient distribution, so that the resistance of each aluminum scandium nitride film can be influenced, a plurality of stable resistance states are generated, a multi-resistance-state effect is realized, the storage state of the memristor is greatly enriched, and possibility is provided for high-density data storage.

A method of depositing a film layer on a substrate incorporates ion flux control to alter sputter atom trajectories. The method may include flowing argon around a perimeter of the substrate, wherein a surface of the substrate has a plurality of sidewalls and an edge region containing an edge structure proximate to the perimeter of the substrate; forming a plasma to ionize the argon to form a flux of Ar + ions, thereby inducing aluminum sputtering to produce aluminum atoms for deposition on the substrate; generating an AC bias on the substrate to increase the Ar + ion flux density at the edge region of the substrate, thereby changing the aluminum atom trajectory impinging the edge region; and heating the substrate to increase the mobility of the aluminum atoms deposited on the edge structure.

The invention discloses an aluminum alloy complex cavity diffusion welding method, which is characterized in that a uniform and compact organic molecule adsorption protection layer is formed on the surface of aluminum by completely immersing a cleaned blank in a diethylene glycol dimethyl ether solution for ultrasonic-assisted treatment. The protective film can effectively isolate air at normal temperature and prevent the oxidation film from regenerating; and in the initial stage of diffusion welding temperature rise, the aluminum alloy can be completely decomposed and volatilized, no impurity is left, and the high-activity clean aluminum surface is exposed. According to the method, diffusion welding is carried out under the conditions that the vacuum degree is high, the temperature is 500-560 DEG C and the pressure is 5-15 MPa in cooperation with a positioning tool system matched with the thermal expansion coefficient, aluminum atoms are fully diffused under the condition that no oxidation film hinders exist, and high-quality metallurgical bonding is formed. By means of the technical scheme, the problem that the welding rate is low due to an oxidation film on the surface of the aluminum alloy is successfully solved, meanwhile, the defects of ultrahigh vacuum equipment input and middle layer material introduction are overcome, and the manufacturing quality and production efficiency of complex aluminum alloy components are greatly improved.

[Problem] To provide an organosol containing tetracoordinated aluminum atom-containing inorganic particles that have high dispersion stability in an organic solvent. [Solution] Provided are: an inorganic particle-dispersed organosol containing tetracoordinated aluminum atom-containing inorganic particles and an organic solvent, wherein the amount of aluminum atoms present in all of the inorganic particles is 100-50,000 ppm relative to the mass of the inorganic particles in terms of Al2O3, and the anion is contained in an amount of 0.1-50 ppm relative to the mass of the inorganic particle-dispersed organosol; and a method for producing the inorganic particle-dispersed organosol.

The application relates to the technical field of carbon dioxide capture, in particular to a CO2 adsorbent based on Fe-based aluminophosphate and a preparation method thereof. The preparation method comprises the following steps: 1) mixing aluminum isopropoxide with water, dissolving under stirring, and then sequentially adding orthophosphoric acid and a structure directing agent to form a reaction gel; 2) adding a Fe precursor solution and additional water into the reaction gel obtained in the step 1) to form a doped system; wherein the aluminum isopropoxide is converted into Al2O3 at the mole number of aluminum atoms, and the mole ratio of the additional water to Al2O3 is 100-250:1; 3) carrying out hydrothermal reaction on the doped system obtained in the step 2) in a reaction kettle to obtain Fe-doped ALPO crystals; and 4) continuously activating the Fe-doped ALPO crystals obtained in the step 3) to obtain the CO2 adsorbent based on Fe-based aluminophosphate. The application solves the problems of the CO2 adsorbent in the prior art in the aspects of adsorption capacity, adsorption kinetics, thermal stability and chemical stability.

The invention discloses an aluminum alloy surface functionalized passivation layer construction method based on anhydrous ECMP and application of the aluminum alloy surface functionalized passivation layer construction method in diffusion welding, and belongs to the technical field of metal material surface treatment and connection. According to the method, a non-aqueous electrolyte system with terpilenol as a matrix is adopted, and a phosphorus-doped composite passivation layer with double functions of polishing and welding is constructed on the surface of the aluminum alloy in situ through an electrochemical mechanical polishing (ECMP) process. The water-free electrolyte comprises a supporting electrolyte, a film-forming agent triethyl phosphate, a corrosion inhibitor benzotriazole, a nanometer grinding material and a viscosity modifier. The functional passivation layer can be decomposed in a controlled mode in the diffusion welding process, interface diffusion energy barriers are effectively reduced, aluminum atom mutual diffusion is promoted, and high-quality metallurgical bonding is achieved. According to the method, the technical problem that a natural oxidation film hinders atomic diffusion in aluminum alloy diffusion welding is fundamentally solved, the strength of a diffusion welding joint can reach 90% or above of that of base metal, meanwhile, the diffusion welding temperature is reduced by 20-40 DEG C, the process time is shortened by 30% or above, and the method has remarkable engineering application value.

Hydrotreating catalyst material and / or hydrotreating catalyst particles are provided having at least two hydrotreating metal components and a chelating agent carried on a support. The support comprises an inorganic oxide binder and a post-framework modified ultra-stable Y-type (USY) zeolite in which a portion of aluminum atoms constituting a zeolite framework thereof is substituted with zirconium atoms and / or titanium atoms and / or hafnium atoms. The hydrotreating metal components form a metal complex via the chelating agent, and are carried on said support as chelating complex type II active sites.

The present invention addresses the problem of providing: a coating composition using silica particles in which aluminum atoms are bonded to the surfaces of the silica particles at a specific ratio in terms of Al2O3; a laminated substrate using the coating composition; and a method for producing the laminated substrate. [Solution] A silica particle to be added to a coating composition, the silica particle containing aluminum atoms in which aluminosilicate sites are formed on the silica particle, the aluminum atoms being bonded at a ratio of 120-50000 ppm / SiO2 per 1 g of SiO2 of the silica particle in terms of Al2O3, the aluminum atoms being present in the entire silica particle, and the silica particle containing aluminum atoms having aluminosilicate sites formed on the aluminosilicate sites being bonded at a ratio of 120-50000 ppm / SiO2 per 1 g of SiO2 of the silica particle in terms of Al2O3. The amount of aluminum atoms present in the entire silica particles is measured by a dissolution method by treating the silica particles with an aqueous hydrofluoric acid solution. The ratio (specific surface area (C) measured by the BET method (nitrogen adsorption method)) / (specific surface area (D) converted by a transmission electron microscope) of the silica particles is 1.00-5.00.

A separator comprises aluminum atoms and fluorine atoms, and in a 2 μm×2 μm region, a ratio A of atomic percentages of the aluminum atoms to the fluorine atoms satisfies 1≤A≤4. The separator includes a substrate, and the surface of the substrate is provided with a coating. The coating includes a plurality of spaced stripes, and an average spacing between two adjacent stripes is 1 mm to 3 mm. The separator provided in this application can improve the high-temperature cycle performance, low-temperature intermittent cycle performance, and thermal safety performance of the electrochemical apparatus.

A toner comprising a toner particle and an external additive, wherein the toner particle comprises a core comprising a resin A and a shell comprising a resin B on the surface of the core, the external additive comprises a hydrotalcite particle A, fluorine and aluminum are present in an inner part of the hydrotalcite particle A in line analysis in STEM-EDS mapping analysis of the toner, and a concentration ratio of the number of fluorine atoms relative to aluminum atoms (F / Al) in the hydrotalcite particle A, as determined by primary component mapping of the hydrotalcite particle A in the STEM-EDS mapping analysis of the toner, is 0.01 to 0.60.

This invention discloses a method for preparing an ultra-low temperature, water- and sulfur-resistant surface-all-silica Cu-SSZ-13 denitrification catalyst. A silicon source, aluminum source, alkali source, template agent, organic inhibitor, crystal growth regulator, and water are mixed to form a gel. After aging and crystallization, a Na-type SSZ-13 molecular sieve is obtained. Then, copper ion exchange is performed to obtain the surface-all-silica Cu-SSZ-13 denitrification catalyst. This invention regulates the polymerization kinetics of silicon and aluminum sources on the crystal surface in the molecular sieve synthesis system, making the polymerization rate of silicon significantly lower than that of aluminum. This leads to preferential nucleation of aluminum atoms, resulting in the spontaneous formation of an eight-membered ring shell of pure silicon without aluminum during crystal growth. This inhibits the competitive adsorption and reaction of H2O and SO2 near the active center. Utilizing the advantage that the pore size of the SSZ-13 topology is smaller than the molecular dynamic diameter of SO2, SO2 is blocked from entering the interior, maintaining the integrity of the internal framework structure and ion exchange sites. This results in a catalyst exhibiting significantly better water and sulfur resistance than traditional Cu-SSZ-13 catalysts.

This application provides a passivation method and passivation equipment, relating to the field of semiconductor or photovoltaic material processing, and solves the technical problems of high cost and safety hazards associated with toxic passivation consumables in substrate passivation. The passivation method includes: conveying a substrate to a first process chamber of the passivation equipment; introducing a first process gas into the first process chamber; and using a target containing aluminum to perform magnetron sputtering on the substrate to deposit a first thin film on a cross-section of the substrate, the first thin film comprising aluminum atoms; conveying the substrate to a second process chamber; introducing a second oxygen gas into the second process chamber; and using a second plasma generated by a first inductively coupled plasma ion source to oxidize the aluminum atoms in the first thin film to generate a second thin film on the surface of the first thin film, the second thin film comprising aluminum oxide. This method eliminates the need for expensive PECVD or ALD equipment, saving equipment costs, and the required consumables are non-toxic and harmless, resulting in low cost.

The invention discloses a ZSM-5 zeolite catalyst with an acid center for liquid-phase xylene isomerization and a preparation method of the ZSM-5 zeolite catalyst, and belongs to the technical field of catalysts.The ZSM-5 zeolite catalyst with the acid center for liquid-phase xylene isomerization starts from increasing the surface aluminum content (active sites) of ZSM-5 zeolite, adopts a strategy of adding an aluminum source and an organic template agent step by step, and conducts dynamic control over zeolite synthesis. And the bulk phase silica-alumina ratio of the zeolite product can be reduced to 23 or below. In addition, the strategy of adding the aluminum source and the organic template agent step by step can also improve the content of aluminum atoms on the surface of the ZSM-5 molecular sieve and improve the accessibility of reactant molecules and active sites. The reaction temperature of liquid-phase xylene isomerization is low, and the molecular diffusion of reactants is limited, so that the active sites of the ZSM-5 zeolite at an acid center are increased, the contact frequency of the reactants and the ZSM-5 zeolite is increased, and the catalytic performance of the catalyst, especially the activity index of the catalyst, is improved.

A multilayer structure comprising: a laminate (α) including a substrate (X) and a layer (Y), and a laminate (β) including a substrate (X) and a layer (Y'), wherein the layer (Y) contains: a reaction product (D) of a metal oxide (A) containing aluminum atoms and an inorganic phosphorus compound (B), and the layer (Y') contains at least one selected from metal oxides, metal nitrides, metal oxynitrides, metal carbonitrides, and the aforementioned reaction product (D), the laminate (α) and the laminate (β) are laminated by means of an adhesive layer (I), and the total light transmittance of the multilayer structure, as measured according to JIS K 7361-1:1997, is 87% or more, and the moisture transmittance, as measured according to ISO 15106-5, is 2.0 × 10⁻⁶. ‑3 g / m 2 Below the heavens.

The invention discloses a purification method of quartz sand tailings, and relates to the technical field of quartz sand production. According to the method, firstly, the quartz sand tailings are pretreated, iron ore in the tailings is made to generate gaseous ferric chloride and titanium chloride by adding sodium chloride to be removed, and under the action of microwaves, cracks are generated and cracked on interfaces between minerals, so that fine impurities in the tailings are exposed, and then the acid etching effect is enhanced; the ultrasonic action can enhance the reaction of mineral substances with acid and chlorine and can further crush fine particles, then through ball milling, quartz sand is in a mineral monomer dissociation state, then through high temperature, an iron phase existing in the form of limonite in tailings is converted into a magnetic iron phase, then the iron phase is separated from a quartz phase, and the iron phase is separated from the quartz phase. The method comprises the following steps of: firstly, performing high-temperature calcination on a cross section, then roasting under reducing gas to complete enrichment of iron, and simultaneously performing high-temperature calcination to expose aluminum atoms on the cross section, and further performing accurate impurity removal on the aluminum atoms through microorganisms to obtain high-purity quartz.

The present invention provides a novel multilayer structure which is excellent in gas barrier properties and water vapor barrier properties, can maintain the gas barrier properties and water vapor barrier properties even after being bent, and does not cause appearance defects such as interlayer peeling after retort treatment, a packaging material and an article using the same. The present invention relates to a multilayer structure which has a substrate (X), a layer (Y), and a layer (Z), at least one set of the layer (Y) and the layer (Z) are adjacent and stacked, the layer (Y) contains a reaction product (D) of a metal oxide (A) and an inorganic phosphorus compound (BI), the metal oxide (A) contains aluminum atoms, the layer (Z) contains a metal compound (R) having metal atoms (M R ) and a hydroxyl group-containing resin (W), and the molar ratio M R / M MR of the number of moles (M Al ) of the metal atoms (M MR ) per unit area of the layer (Y) and the layer (Z) to the number of moles (M Al ) of aluminum atoms is 0.0005 or more and 0.05 or less.

The present application relates to the technical field of nano energy storage material preparation, and particularly relates to a two-dimensional molybdenum nitride and crystalline Mo2N nanosheet ammonia-free preparation method. A two-dimensional molybdenum boride compound derived from a rare earth molybdenum aluminum boride compound is used as a precursor to prepare two-dimensional molybdenum nitride and crystalline Mo2N nanosheet with a six-fold symmetric layered structure under an ammonia-free condition. A compound with a hexagonal crystal system formed by metal molybdenum, heavy rare earth metal, metal aluminum and boron is used as a precursor. After wet etching of an aluminum atom layer and a rare earth atom in the compound by using a fluorine-containing acid solution, intercalation and exfoliation are performed to form a two-dimensional derivative with a certain energy storage density. The two-dimensional derivative is annealed at different temperatures under nitrogen to control the atomic layer spacing, surface chemical state, surface functional group and chemical bond in the two-dimensional derivative, realize in-situ conversion from the two-dimensional molybdenum boride to the two-dimensional molybdenum nitride and crystalline Mo2N with a six-fold symmetric layered structure, and significantly improve the specific capacitance.

An alloy comprising 92 at % aluminum, 2 at % titanium, 2 at % iron, 2 at % cobalt, and 2 at % nickel. A method of making an alloy is disclosed. The method contains the steps of providing particles of desired composition, utilizing a selective leaser melting (SLM) apparatus producing a first layer of the particles on a substrate and melting and solidifying a first group selected areas of the layer of particles, wherein the melting and the solidification results in an alloy of desired composition, containing intermetallic lamellae and has thickness equal to thickness of the first layer. The process is repeated to produce an object of specified thickness and shape containing the melted and solidified areas.

The invention discloses a simulation method for preparing an aluminum-tin-copper film through magnetron sputtering and a related device, and relates to the technical field of analogue simulation, the method comprises the following steps: simulating a process of bombarding an aluminum-tin-copper alloy target material by argon ions according to a preset energy range of the argon ions to obtain sputtering atom data; based on the sputtering atom data, simulating the process of moving aluminum atoms, tin atoms and copper atoms from a target surface to a matrix by utilizing a constructed target three-dimensional model of magnetron sputtering equipment to obtain data of the atoms reaching the matrix; preprocessing the copper substrate in the constructed simulation box to obtain a target molecular dynamics simulation system; and determining deposition parameters according to the atom arrival matrix data, and performing aluminum-tin-copper film deposition process simulation and relaxation treatment on the target molecular dynamics simulation system based on the deposition parameters to obtain a microstructure model of the aluminum-tin-copper film. The simulation method is provided for process development and optimization of magnetron sputtering preparation of the high-performance aluminum-tin-copper thin film.

The application discloses a low-loss low-frequency transformer core and an annealing process, and relates to the technical field of transformer cores.The application first heats and evaporates to prepare aluminum vapor, and lets silicon steel perform first annealing under an aluminum-containing atmosphere; aluminum vapor will deposit an aluminum-containing film on the surface of the silicon steel; during annealing, aluminum atoms will diffuse into the steel material, reducing the interface stress between the insulating coating and the silicon steel sheet; then, second annealing is performed under an oxygen atmosphere, so that aluminum atoms are converted into aluminum oxide, and a dense protective film is formed on the surface of the silicon steel, reducing the eddy current loss of the core; after the silicon steel is subjected to the second annealing, the internal grain boundaries of the silicon steel will diffuse and the grains will grow, thereby significantly improving the magnetic conductivity of the silicon steel; the aluminum-containing film is first introduced, and then the second annealing is performed; the generation of aluminum oxide blocks the path of the combination of oxygen molecules and the atoms on the surface of the silicon steel, effectively inhibiting the oxidation of the surface of the silicon steel.The low-loss low-frequency transformer core and the annealing process have the effects of low energy consumption and corrosion resistance.

This invention discloses an aluminum nitride precision ceramic for semiconductor devices and its preparation method, relating to the field of ceramic materials technology for semiconductor devices. The invention utilizes a chemical vapor infiltration process to grow a thick hexagonal boron nitride thin film in situ on the geometrical outer surface and subsurface pore inner walls of a polycrystalline aluminum nitride ceramic substrate. This hexagonal boron nitride thin film alternates with aluminum nitride grains in the polycrystalline aluminum nitride ceramic substrate, forming a boron nitride / aluminum nitride superlattice protective layer on the surface. When high-energy arsenic or phosphorus ions bombard the surface, the hexagonal boron nitride thin film effectively absorbs and dissipates the ion bombardment kinetic energy through an interlayer slip mechanism. Furthermore, the low atomic numbers and light atomic weights of boron and nitrogen significantly reduce the physical sputtering yield of aluminum atoms, achieving comprehensive anti-sputtering protection while ensuring a high-strength bond between the protective layer and the substrate. It also maintains the intrinsic thermal conductivity and insulation properties of AlN ceramics, making it suitable for the operating conditions of high-energy ion implanters.

This application provides a brass-aluminum-brass composite material and its preparation method and application. The preparation method includes: heating a first brass, an aluminum material, and a second brass material to a temperature of 400-500℃ for 2-6 minutes, with a thickness ratio of 1:(1-8):1 for the first brass, aluminum material, and second brass; rolling the heated material according to a brass-aluminum-brass structure, with a single-pass rolling reduction rate of 50%-70%; and then cold rolling to obtain a composite material of the target thickness. The solid-solid-temperature composite process softens the brass and aluminum alloy, making the metal flow and synergistic deformation more favorable during rolling. Simultaneously, the material is in a hot state during rolling, increasing the self-diffusion ability of copper and aluminum at the interface, enabling mutual diffusion of copper and aluminum atoms. The bonding interface transitions from mechanical bonding to metallurgical bonding, forming an IMC layer, which improves the bonding strength of the composite material.

A method for depositing a film layer on a substrate incorporates ion flux control to alter sputtering atom trajectories. A method may include flowing argon gas around a periphery of the substrate with a surface of the substrate having a plurality of structures with sidewalls and an edge region containing edge structures near the periphery of the substrate, forming a plasma to ionize the argon gas to form Ar+ ion flux to induce sputtering of aluminum to generate aluminum atoms for deposition on the substrate, generating an AC bias on the substrate to increase the Ar+ ion flux density at the edge region of the substrate to alter aluminum atom trajectories striking the edge region, and heating the substrate to increase mobility of the aluminum atoms deposited on the edge structures.

A surface-treated aluminum material (1) comprises: a base material (2) composed of aluminum or an aluminum alloy; and a protective coating (3) formed on at least a portion of a surface of the base material (2) and containing oxides of aluminum and hydrated oxides of aluminum. The thickness of the protective coating (3) is 2 µm or more. When the mass percentages of elements in the protective coating (3) are analyzed in a depth direction by glow-discharge optical-emission spectrometry, the ratio CH / CAI of an integrated hydrogen atom mass percentage CH to an integrated aluminum atom mass percentage CAl, in a range extending from a surface of the protective coating (3) to a location at a depth of 1 µm, is 0.2 or more and 0.7 or less.

Provided are: a silica particle-containing dispersion liquid capable of polishing a resin or the like at a high polishing speed and having excellent storage stability even at a high concentration; and a polishing composition containing said dispersion liquid.　The dispersion liquid contains silica particles and a basic aluminum salt aqueous solution, wherein at least a portion of the surface of the silica particles is coated with an aluminum-containing compound, and the number of aluminum atoms of the free aluminum component in the dispersion liquid is 1-60 µmol / m2 with respect to the surface area of the silica particles.

To provide a hollow silica particle which has high dispersion stability in a medium and has no risk of outflow of an alkali metal or the like.SOLUTION: A hollow silica sol, wherein the amount of sulphuric acid contained in the hollow silica sol is from 1ppm to 150ppm, and a method for producing the same.SELECTED DRAWING: None