13 results about "Aluminium atom" patented technology

This invention discloses a method for preparing an ultra-low temperature, water- and sulfur-resistant surface-all-silica Cu-SSZ-13 denitrification catalyst. A silicon source, aluminum source, alkali source, template agent, organic inhibitor, crystal growth regulator, and water are mixed to form a gel. After aging and crystallization, a Na-type SSZ-13 molecular sieve is obtained. Then, copper ion exchange is performed to obtain the surface-all-silica Cu-SSZ-13 denitrification catalyst. This invention regulates the polymerization kinetics of silicon and aluminum sources on the crystal surface in the molecular sieve synthesis system, making the polymerization rate of silicon significantly lower than that of aluminum. This leads to preferential nucleation of aluminum atoms, resulting in the spontaneous formation of an eight-membered ring shell of pure silicon without aluminum during crystal growth. This inhibits the competitive adsorption and reaction of H2O and SO2 near the active center. Utilizing the advantage that the pore size of the SSZ-13 topology is smaller than the molecular dynamic diameter of SO2, SO2 is blocked from entering the interior, maintaining the integrity of the internal framework structure and ion exchange sites. This results in a catalyst exhibiting significantly better water and sulfur resistance than traditional Cu-SSZ-13 catalysts.

This application provides a passivation method and passivation equipment, relating to the field of semiconductor or photovoltaic material processing, and solves the technical problems of high cost and safety hazards associated with toxic passivation consumables in substrate passivation. The passivation method includes: conveying a substrate to a first process chamber of the passivation equipment; introducing a first process gas into the first process chamber; and using a target containing aluminum to perform magnetron sputtering on the substrate to deposit a first thin film on a cross-section of the substrate, the first thin film comprising aluminum atoms; conveying the substrate to a second process chamber; introducing a second oxygen gas into the second process chamber; and using a second plasma generated by a first inductively coupled plasma ion source to oxidize the aluminum atoms in the first thin film to generate a second thin film on the surface of the first thin film, the second thin film comprising aluminum oxide. This method eliminates the need for expensive PECVD or ALD equipment, saving equipment costs, and the required consumables are non-toxic and harmless, resulting in low cost.

A multilayer structure comprising: a laminate (α) including a substrate (X) and a layer (Y), and a laminate (β) including a substrate (X) and a layer (Y'), wherein the layer (Y) contains: a reaction product (D) of a metal oxide (A) containing aluminum atoms and an inorganic phosphorus compound (B), and the layer (Y') contains at least one selected from metal oxides, metal nitrides, metal oxynitrides, metal carbonitrides, and the aforementioned reaction product (D), the laminate (α) and the laminate (β) are laminated by means of an adhesive layer (I), and the total light transmittance of the multilayer structure, as measured according to JIS K 7361-1:1997, is 87% or more, and the moisture transmittance, as measured according to ISO 15106-5, is 2.0 × 10⁻⁶. ‑3 g / m 2 Below the heavens.

An alloy comprising 92 at % aluminum, 2 at % titanium, 2 at % iron, 2 at % cobalt, and 2 at % nickel. A method of making an alloy is disclosed. The method contains the steps of providing particles of desired composition, utilizing a selective leaser melting (SLM) apparatus producing a first layer of the particles on a substrate and melting and solidifying a first group selected areas of the layer of particles, wherein the melting and the solidification results in an alloy of desired composition, containing intermetallic lamellae and has thickness equal to thickness of the first layer. The process is repeated to produce an object of specified thickness and shape containing the melted and solidified areas.

This invention discloses an aluminum nitride precision ceramic for semiconductor devices and its preparation method, relating to the field of ceramic materials technology for semiconductor devices. The invention utilizes a chemical vapor infiltration process to grow a thick hexagonal boron nitride thin film in situ on the geometrical outer surface and subsurface pore inner walls of a polycrystalline aluminum nitride ceramic substrate. This hexagonal boron nitride thin film alternates with aluminum nitride grains in the polycrystalline aluminum nitride ceramic substrate, forming a boron nitride / aluminum nitride superlattice protective layer on the surface. When high-energy arsenic or phosphorus ions bombard the surface, the hexagonal boron nitride thin film effectively absorbs and dissipates the ion bombardment kinetic energy through an interlayer slip mechanism. Furthermore, the low atomic numbers and light atomic weights of boron and nitrogen significantly reduce the physical sputtering yield of aluminum atoms, achieving comprehensive anti-sputtering protection while ensuring a high-strength bond between the protective layer and the substrate. It also maintains the intrinsic thermal conductivity and insulation properties of AlN ceramics, making it suitable for the operating conditions of high-energy ion implanters.

The application discloses a thin film aluminum-plated composite current collector and a preparation method thereof, and relates to the technical field of current collectors. The application firstly performs low-temperature plasma treatment on a base film to introduce hydroxyl groups, then immerses the base film into a modified liquid containing an acylhydrazone bond intermediate A, and forms a modified base film containing a dynamic covalent bond through heating and epoxy ring opening crosslinking; subsequently, a micron-level aluminum layer is deposited on both sides of the base film through magnetron sputtering and vacuum evaporation; finally, the aluminum layer is subjected to gradient heat treatment assisted by a magnetic field to optimize the grain orientation and refine the grains of the aluminum layer; the dynamic covalent bond layer forms a coordination bond with aluminum atoms through a nitrogen-containing functional group to improve the interface bonding strength, and the dynamic covalent bond and the crosslinking network endow the base film with excellent stability and electrolyte blocking ability; the gradient heat treatment assisted by the magnetic field optimizes the electrical conductivity and mechanical properties of the aluminum layer in cooperation, and also releases the internal stress of the film, effectively avoiding product curling or cracking. The thin film aluminum-plated composite current collector prepared by the application has the effects of good electrical conductivity, high interface bonding and excellent electrochemical stability.

The present invention provides a catalytic cracking catalyst that exhibits high activity even when containing carbon. [Solution] A catalytic cracking catalyst according to one aspect of the present invention contains zeolite and carbon. The zeolite contains hydrogen atoms, oxygen atoms, aluminum atoms, and silicon atoms, as well as atoms of one or more elements selected from alkali metal elements, alkaline earth metal elements, and transition metal elements, in a specific proportion. The weight loss of the catalytic cracking catalyst in thermogravimetric analysis is 0.01 to 1.5% by weight, based on the weight of the catalytic cracking catalyst.

The application discloses a growth method for reducing non-uniformity of GaN heterojunction material square resistance sheet and application. The method adopts zero ammonia supply process when growing an AlN insertion layer, enhances aluminum atom migration through an aluminum-rich atmosphere, and improves thickness uniformity of the insertion layer; before growing an AlGaN barrier layer, N2+H2 mixed carrier gas is adopted and pretreatment is carried out, flow field stability is optimized, and therefore, consistency of aluminum component and thickness of the barrier layer is improved. Through the above-mentioned synergistic process, two core structural parameters affecting square resistance are controlled from the source, the non-uniformity of the square resistance sheet of the epitaxial material can be significantly reduced to below 1%, and the uniformity of the electrical performance of the material is greatly improved, and reliable raw material guarantee is provided for batch manufacturing of high-performance and high-consistency GaN microwave power devices.

This invention discloses a Cu@basalt fiber / porous aluminum composite material and its preparation method, belonging to the field of material preparation technology. The method of this invention utilizes diffusion between copper atoms on the surface of basalt fibers and aluminum atoms in the porous aluminum matrix to generate a metallurgical bonding interface, improving the interfacial bonding force. This results in a material with both high strength and high sound absorption properties, meeting the application requirements in sound absorption and noise reduction technologies. The obtained material has a porosity of 81.71%–83.38%, a pore size of 0.4 mm–0.5 mm, a basalt fiber volume fraction of 7 vol.%–8 vol.%, a fiber diameter of 20 μm–30 μm, and a fiber length of 1 mm–2 mm. The compressive yield strength of the in-situ diffusion metallurgically reinforced Cu@basalt fiber / porous aluminum composite material can reach 4.71 MPa–5.37 MPa, which is 5.4%–7.62% higher than that of basalt fiber / porous aluminum composite materials with the same porosity and pore size.

Provided is a catalytic cracking catalyst that has high activity even when containing carbon. The catalytic cracking catalyst of the present disclosure contains zeolite and carbon. The zeolite contains hydrogen atoms, oxygen atoms, aluminum atoms, and silicon atoms, and also contains atoms of one or more elements selected from alkali metal elements, alkaline earth metal elements, and transition metal elements, in specific proportions. The weight loss of the catalytic cracking catalyst in thermogravimetry is 0.01-1.5 wt % based on the weight of the catalytic cracking catalyst.

This invention provides an aluminum-doped silicon carbide-based special ceramic composite material, its preparation method, chassis, and semiconductor device, belonging to the technical field of silicon carbide composite materials. This application synthesizes a polymer precursor with aluminum, silicon, and carbon elements uniformly distributed at the molecular level. Subsequently, this precursor is mixed with polystyrene microspheres as a sacrificial template, and subjected to stepwise heat treatment. At low temperature, the mixture crosslinks and solidifies, decomposing the template to form pores. At high temperature, it crystallizes into a porous silicon carbide framework uniformly doped with aluminum atoms. Then, molten aluminum-silicon alloy is filled into the framework using a vacuum infiltration method. During infiltration, the liquid aluminum-silicon alloy reacts with residual carbon on the framework surface at the interface, forming an interface region containing Al, Si, and C elements between the metal and ceramic phases, improving the interfacial bonding between the metal and ceramic. The resulting bicontinuous interpenetrating network structure effectively combines the hardness of ceramics with the toughness and high conductivity of metals.

A method for the reactive deposition of crystalline, aluminum-polar or nitrogen-polar layers containing or consisting of AlN onto a foreign substrate is provided. In this method, a magnetron sputtering unit is provided, the foreign substrate is heated to a temperature of < 800 °C, a pulsed electrical voltage with a duty cycle of <1 is applied between a magnetron and the foreign substrate, and the magnitude of the applied pulsed electrical voltage, the duty cycle, and / or the amount of nitrogenous gas supplied to the vacuum chamber from a gas source are regulated based on the concentration of aluminum and nitrogen atoms in the vacuum chamber, determined by a detector, such that a metallic operating point or a reactive operating point is established.Furthermore, a system is provided that is configured for the reactive deposition of crystalline, aluminium-polar or nitrogen-polar layers containing or consisting of AlN onto a foreign substrate.