Preparation method of solution trimethyl indium source

A solution trimethyl indium source, technology of trimethyl indium source, applied in the field of preparation of solution trimethyl indium source, can solve problems such as limited liquefaction ability and influence on material growth, and achieve good liquefaction ability effect

Inactive Publication Date: 2004-07-21
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The problem of vapor pressure can be solved relatively well, but the pure use of hydrocarbon solvents not only has the disadvantage of limited liquefaction capacity, but also the vapor of hydrocarbon compounds may also affect the growth of materials

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] 1. Add 125 grams of anhydrous sodium sulfate, 160 mL of anhydrous benzene and 48 grams of freshly steamed benzaldehyde into the three-necked bottle, slowly add 51 grams of n-hexylamine dropwise under stirring, then stir at room temperature for 8 hours, heat and stir slightly for 2 After 1 hour, the reaction solution was suction-filtered and washed with anhydrous benzene several times to obtain a colorless filtrate. After removing the water with a water separator, the benzene was evaporated under normal pressure. After the remaining small amount of benzene was removed, the product was distilled under reduced pressure to collect the product at 116° C. / 3 mmHg to obtain 73 grams of a yellow liquid Schiff base product, with a yield of 84%.

[0014] 2. Add 20 grams of trimethylindium to the round bottom flask, add 100 milliliters of hexane, slowly add the metered amount of N-hexylbenzylidene imine under stirring, heat (40-50°C) and stir for about 1 hour, The solvent was remov...

Embodiment 2

[0016] 1. Put 98.2 grams of cyclohexanone, 99.2 grams of cyclohexylamine and 200 milliliters of benzene successively in the reaction bottle, install a water separator, heat to reflux, and remove water until the water stops producing. Benzene was distilled off under normal pressure, and then distilled under reduced pressure to collect the 110°C / 7mmHg Schiff base product with a yield of about 92%.

[0017] 2. Add 20 grams of trimethylindium to a round bottom flask, add 100 milliliters of benzene, slowly add the metered Schiff base obtained above under stirring, heat (40-50°C) and stir for about 1 hour, remove under reduced pressure The solvent is the complex of Schiff base and trimethyl indium, the melting point is -42±1℃. Then add three times the amount of trimethylindium to it to obtain a liquid with a melting point of -5±1°C.

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Abstract

A process for preparing the solution as the source of trimethyl indium source includes such steps as preparing schiff base by dewatering reaction between aromatic aldehyde (or ketone) and the primary amine or fatty aldehyde or ketone, adding trimethyl indium to low-boiling-point solvent, stirring while heating, adding schiff base, pressure-reduction distilling to remove solvent and to obtain the mating member of schiff base and trimethyl indium.

Description

1. Technical field [0001] The invention relates to a method for preparing a solution trimethyl indium source used in the technical field of optoelectronics. 2. Background technology [0002] High-purity trimethyl indium is an important material for the growth of compound semiconductor optoelectronic materials by metal organic chemical vapor deposition (MOCVD), and is widely used in the growth of indium phosphide (InP), indium gallium arsenic nitrogen (InGaAsN), indium gallium arsenic (InGaAs ), indium gallium phosphide (InGaP) and other compound semiconductor thin film materials. [0003] Pure trimethyl indium is solid at room temperature, and there is a serious disadvantage of unstable vapor pressure during use, which seriously affects the control of the growth process of compound semiconductor thin film materials and the quality of compound semiconductor thin film materials. When the solid trimethyl indium After the surface is partially oxidized, the products generated by...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C07F5/00
Inventor 潘毅陈化冰虞磊李翔朱春生孙祥祯
Owner NANJING UNIV
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