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Method for preparing single-phase copmact silicon titaium carbid block body material by using A1 as adjuvant through hot-pressing reaction in situ

A technology of silicon carbide titanium and bulk materials, which is applied in the field of preparation of ceramic materials, and can solve problems such as unsuitability for industrial production

Inactive Publication Date: 2004-12-15
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Document (8) J.Eur.Ceram.Soc.22, 2002. Using a new spark plasma sintering (SPS) process, Ti, Si and TiC were used as raw materials to obtain Ti with a purity of 98%. 3 SiC 2 bulk material, but this process is not suitable for industrial production

Method used

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  • Method for preparing single-phase copmact silicon titaium carbid block body material by using A1 as adjuvant through hot-pressing reaction in situ
  • Method for preparing single-phase copmact silicon titaium carbid block body material by using A1 as adjuvant through hot-pressing reaction in situ
  • Method for preparing single-phase copmact silicon titaium carbid block body material by using A1 as adjuvant through hot-pressing reaction in situ

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Experimental program
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Effect test

Embodiment 1

[0012] 150 grams of mixed powder with a molar ratio of TiC:Ti:Si:Al=2:1:0.95:0.25 was put into a graphite mold and sintered in an Ar protective atmosphere. The heating rate is 50°C / min, the sintering temperature is 1300°C, the pressure is 30MPa, and the heat preservation is 2 hours. The density of the bulk material is 99%, Ti 3 SiC 2 The content is 98.2wt.%. Compressive strength ≥800MPa, three-point bending strength σ b ≥420MPa, K IC ≥5MPa·m 1 / 2 .

Embodiment 2

[0014] 250 grams of mixed powder with a molar ratio of TiC:Ti:Si:Al=2:1:1.05:0.15 was put into a graphite mold and sintered in an Ar protective atmosphere. The heating rate is 50°C / min, the sintering temperature is 1400°C, the pressure is 60MPa, and the heat preservation is 6 hours. The density of the bulk material is 99.8%, Ti 3 SiC 2 The content is 99.5wt.%. Compressive strength ≥800MPa, three-point bending strength σ b ≥500MPa, K IC ≥5MPa·m 1 / 2 .

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Abstract

The invented method uses TiC, Ti, Si and Al as raw material, their mole ratio is as follows: TiC:Ti:Si:Al=2:1:(0.95-1.05):(0.15-0.25). After all the raw materials are mixed uniformly, they are sintered in heat-pressing furnace with Ar atmosphere, its sintering temp. is 1200-1500 deg.c, heat-insulating time is 1-8 hr., and the pressure is 20-80 MPa. The Ti3SiC2 content in the prepared product is high, and can be up to 98 wt%, its material compactness is greater than 99%, and its compression strength is up to 800 MPa, and its three-point bending strength sigma b is greater than or equal to 420 MPa.

Description

Technical field [0001] The invention relates to the preparation of ceramic materials, in particular to a method for preparing a single-phase compact silicon-titanium carbide bulk material by in-situ hot-pressing reaction with Al as an auxiliary agent. Background technique [0002] Silicon carbide titanium (Ti 3 SiC 2 ) Is an excellent high-temperature structural / functional material. It has the same electrical conductivity, thermal conductivity, high-temperature plasticity and workability as metal, and high-strength, low-density, good high-temperature stability and high-temperature Antioxidant and other characteristics. However, the synthesis of silicon carbide titanium is more difficult. Literature (1) Monatsh.Fur.Chem.98, 1967. Take TiH 2 , Si and graphite as raw materials, chemical reaction at 2000 ℃ to synthesize Ti 3 SiC 2 . Literature (2) J. Less. Common Metals. 26, 1972. Literature (3) J. Mater. Sci. 29, 1994. SiCl 4 , TiCl 4 , CCl 4 , H 2 And TiCl 4 , SiCl 4 , CH 4 , H 2 A...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/515C04B35/56C04B35/645
Inventor 朱教群梅炳初徐学文刘俊
Owner WUHAN UNIV OF TECH
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