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Preparation method of tellurium-gallium-silver single crystals

A single crystal, gallium tellurium silver technology, which is applied in the field of I-III-VI2 semiconductor material preparation, can solve the problems of poor practicality and achieve the effect of promoting reaction synthesis, promoting growth and reducing reaction time

Active Publication Date: 2016-05-18
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In order to overcome the shortcomings of the poor practicability of the existing silver gallium tellurium crystal method, the present invention provides a preparation method for silver gallium tellurium single crystal

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Step 1. According to the molar ratio of 1:1:2, put the silver, gallium and tellurium elemental raw materials with a purity of 99.9999% into a dry and clean quartz crucible, and shake the quartz crucible to make the silver, gallium and tellurium elemental raw materials evenly distributed .

[0022] Step 2. Vacuumize the charged quartz crucible, and the vacuum degree of the quartz crucible reaches 4×10 -5 Sealed at Pa.

[0023] Step 3. Put the sealed quartz crucible into a high-temperature rocking furnace. In the low-temperature zone of 400°C, use a heating rate of 70°C / h. When heated to 450°C, keep it warm for 3 hours. , using a heating rate of 40°C / h, keep warm when heated to 960°C, turn on the rotary switch of the mixing furnace, rotate at a constant speed of 3rpm for 3 hours, then keep warm for 3 hours and then cool down.

[0024] Step 4. When cooling down, use a rate of 40°C / h to reach the solidification temperature of 712°C and cut off the power directly, allowing...

Embodiment 2

[0030] Step 1. According to the molar ratio of 1:1:2, put the silver, gallium and tellurium elemental raw materials with a purity of 99.9999% into a dry and clean quartz crucible, and shake the quartz crucible to make the silver, gallium and tellurium elemental raw materials evenly distributed .

[0031] Step 2. Vacuumize the charged quartz crucible, and the vacuum degree of the quartz crucible reaches 4×10 -5 Sealed at Pa.

[0032] Step 3. Put the sealed quartz crucible into a high-temperature rocking furnace. In the low temperature zone of 425°C, adopt a heating rate of 85°C / h, heat it to 450°C for 4 hours, and heat it in the medium temperature zone of 700°C. , using a heating rate of 45°C / h, keep warm when heated to 960°C, turn on the rotary switch of the mixing furnace, rotate at a constant speed of 3rpm for 4 hours, then keep warm for 4 hours and then cool down.

[0033] Step 4. When cooling down, use a rate of 45°C / h to reach the solidification temperature of 712°C and c...

Embodiment 3

[0039] Step 1. According to the molar ratio of 1:1:2, put the silver, gallium and tellurium elemental raw materials with a purity of 99.9999% into a dry and clean quartz crucible, and shake the quartz crucible to make the silver, gallium and tellurium elemental raw materials evenly distributed .

[0040] Step 2. Vacuumize the charged quartz crucible, and the vacuum degree of the quartz crucible reaches 4×10 -5 Sealed at Pa.

[0041] Step 3. Put the sealed quartz crucible into a high-temperature rocking furnace. In the low temperature zone of 450°C, use a heating rate of 100°C / h. When heated to 450°C, keep it warm for 5 hours. , using a heating rate of 50°C / h, keep warm when heated to 960°C, turn on the rotary switch of the mixing furnace, rotate at a constant speed of 3rpm for 5 hours, then keep warm for 5 hours and then cool down.

[0042] Step 4. When cooling down, use a rate of 50°C / h to reach the solidification temperature of 712°C and cut off the power directly, allowin...

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PUM

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Abstract

The invention discloses a preparation method of tellurium-gallium-silver single crystals. The method is used for solving the technical problem that an existing method of tellurium-gallium-silver single crystals is poor in practicability. According to the technical scheme, the method comprises the steps that firstly, high-purity raw materials of tellurium, gallium and silver are heated to the melting point of silver, the three raw materials of tellurium, gallium and silver are subjected to a sufficient melting reaction, a furnace body is rotated so that the reaction can be performed sufficiently, then, the temperature is decreased at the certain speed to reach the freezing point, a switch of the furnace body is turned off, and the temperature is decreased to the room temperature at the furnace cooling rate; then, synthetized polycrystal materials are placed into a Bridgman method growing furnace, heating is performed at the certain rate, growing is started at the temperature field of 10-15 DEG C / cm and the crystallization temperature of 712 DEG C after overheating insulation is performed for a period of time, staying is performed for a period of time at the temperature of 670-680 DEG C after growing is completed, in-situ annealing is performed, and the temperature is decreased to the room temperature at the cooling rate of 5 DEG C. Due to the fact that synthesis of polycrystal materials is achieved by increasing the temperature of the melting point of the silver, the temperature field of 10-15 DEG C / cm is adopted when single crystals grow, and growth of tellurium-gallium-silver single crystals is facilitated due to constitutional supercooling.

Description

technical field [0001] The present invention belongs to I-III-VI 2 In the field of preparation of group semiconductor materials, in particular, it relates to a preparation method of silver gallium tellurium single crystal. Background technique [0002] Semiconductor nuclear radiation detectors have broad application prospects in the fields of security inspection, industrial flaw detection, medical diagnosis, astronomical X-ray telescopes, and basic scientific research. [0003] Document 1 "Alan Owens, A. Peacock, Compound Semiconductor Radiation Detectors [J]. Nuclear Instruments and Methods in Physics Research A2004, 531, 18-37" reported that silicon is used in nuclear radiation detectors, but compared with silicon, silver tellurium gallium has a higher average atomic number and is more sensitive to radiation. High stopping power, high detection efficiency. [0004] Document 2 "Gmelin'sHandbuchderanorganischenChemie, VerlagChemieGmbHWeinheim.Bergstrasse, 5ndEdition.Silber...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B28/04C30B11/00
CPCC30B11/00C30B28/04C30B29/46
Inventor 王涛代书俊赵清华殷子昂陈炳奇李洁王维介万奇
Owner NORTHWESTERN POLYTECHNICAL UNIV
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