Preparation method of silver gallium tellurium single crystal

A single crystal, silver tellurium gallium technology, applied in the field of preparation of I-III-VI2 semiconductor materials, can solve problems such as poor practicability, and achieve the effects of promoting reaction synthesis, promoting growth, and reducing reaction time

Active Publication Date: 2018-08-17
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In order to overcome the shortcomings of the poor practicability of the existing silver gallium tellurium crystal method, the present invention provides a preparation method for silver gallium tellurium single crystal

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Step 1. According to the molar ratio of 1:1:2, put the silver, gallium and tellurium elemental raw materials with a purity of 99.9999% into a dry and clean quartz crucible, and shake the quartz crucible to make the silver, gallium and tellurium elemental raw materials evenly distributed .

[0022] Step 2. Vacuumize the charged quartz crucible, and the vacuum degree of the quartz crucible reaches 4×10 -5 Sealed at Pa.

[0023] Step 3. Put the sealed quartz crucible into a high-temperature rocking furnace. In the low-temperature zone of 400°C, use a heating rate of 70°C / h. When heated to 450°C, keep it warm for 3 hours. , using a heating rate of 40°C / h, keep warm when heated to 960°C, turn on the rotary switch of the mixing furnace, rotate at a constant speed of 3rpm for 3 hours, then keep warm for 3 hours and then cool down.

[0024] Step 4. When cooling down, use a rate of 40°C / h to reach the solidification temperature of 712°C and cut off the power directly, allowing...

Embodiment 2

[0030] Step 1. According to the molar ratio of 1:1:2, put the silver, gallium and tellurium elemental raw materials with a purity of 99.9999% into a dry and clean quartz crucible, and shake the quartz crucible to make the silver, gallium and tellurium elemental raw materials evenly distributed .

[0031] Step 2. Vacuumize the charged quartz crucible, and the vacuum degree of the quartz crucible reaches 4×10 -5 Sealed at Pa.

[0032]Step 3. Put the sealed quartz crucible into a high-temperature rocking furnace. In the low temperature zone of 425°C, adopt a heating rate of 85°C / h, heat it to 450°C for 4 hours, and heat it in the medium temperature zone of 700°C. , using a heating rate of 45°C / h, keep warm when heated to 960°C, turn on the rotary switch of the mixing furnace, rotate at a constant speed of 3rpm for 4 hours, then keep warm for 4 hours and then cool down.

[0033] Step 4. When cooling down, use a rate of 45°C / h to reach the solidification temperature of 712°C and ...

Embodiment 3

[0039] Step 1. According to the molar ratio of 1:1:2, put the silver, gallium and tellurium elemental raw materials with a purity of 99.9999% into a dry and clean quartz crucible, and shake the quartz crucible to make the silver, gallium and tellurium elemental raw materials evenly distributed .

[0040] Step 2. Vacuumize the charged quartz crucible, and the vacuum degree of the quartz crucible reaches 4×10 -5 Sealed at Pa.

[0041] Step 3. Put the sealed quartz crucible into a high-temperature rocking furnace. In the low temperature zone of 450°C, use a heating rate of 100°C / h. When heated to 450°C, keep it warm for 5 hours. , using a heating rate of 50°C / h, keep warm when heated to 960°C, turn on the rotary switch of the mixing furnace, rotate at a constant speed of 3rpm for 5 hours, then keep warm for 5 hours and then cool down.

[0042] Step 4. When cooling down, use a rate of 50°C / h to reach the solidification temperature of 712°C and cut off the power directly, allowin...

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PUM

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Abstract

The invention discloses a preparation method of tellurium-gallium-silver single crystals. The method is used for solving the technical problem that an existing method of tellurium-gallium-silver single crystals is poor in practicability. According to the technical scheme, the method comprises the steps that firstly, high-purity raw materials of tellurium, gallium and silver are heated to the melting point of silver, the three raw materials of tellurium, gallium and silver are subjected to a sufficient melting reaction, a furnace body is rotated so that the reaction can be performed sufficiently, then, the temperature is decreased at the certain speed to reach the freezing point, a switch of the furnace body is turned off, and the temperature is decreased to the room temperature at the furnace cooling rate; then, synthetized polycrystal materials are placed into a Bridgman method growing furnace, heating is performed at the certain rate, growing is started at the temperature field of 10-15 DEG C / cm and the crystallization temperature of 712 DEG C after overheating insulation is performed for a period of time, staying is performed for a period of time at the temperature of 670-680 DEG C after growing is completed, in-situ annealing is performed, and the temperature is decreased to the room temperature at the cooling rate of 5 DEG C. Due to the fact that synthesis of polycrystal materials is achieved by increasing the temperature of the melting point of the silver, the temperature field of 10-15 DEG C / cm is adopted when single crystals grow, and growth of tellurium-gallium-silver single crystals is facilitated due to constitutional supercooling.

Description

technical field [0001] The present invention belongs to I-III-VI 2 In the field of preparation of group semiconductor materials, in particular, it relates to a preparation method of silver gallium tellurium single crystal. Background technique [0002] Semiconductor nuclear radiation detectors have broad application prospects in the fields of security inspection, industrial flaw detection, medical diagnosis, astronomical X-ray telescopes, and basic scientific research. [0003] Document 1 "Alan Owens, A. Peacock, Compound Semiconductor Radiation Detectors [J]. Nuclear Instruments and Methods in Physics Research A 2004, 531, 18-37" reported that silicon is used in nuclear radiation detectors, but silver tellurium gallium silver and silicon In comparison, the average atomic number is high, the ability to stop rays is higher, and the detection efficiency is high. [0004] Document 2 "Gmelin's Handbuch der organischen Chemie, Verlag Chemie GmbH Weinheim. Bergstrasse, 5nd Editi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/46C30B28/04C30B11/00
CPCC30B11/00C30B28/04C30B29/46
Inventor 王涛代书俊赵清华殷子昂陈炳奇李洁王维介万奇
Owner NORTHWESTERN POLYTECHNICAL UNIV
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