Abrading head for chemical mechanical abrading

Abstract

The invention discloses a grinding head for chemical mechanical grinding. The grinding head has a non-rigid knife-edge ring with non-rigid knife-edges protruding downward. The non-rigid knife-edge ring surrounds a support plate of the grinding head to replace the knife-edges on the traditional support plate. The grinding head also has an elastic film extending to the outer edge of the support plate, and the outer edge of the elastic film is a predetermined distance away from the knife edge.

Description

(1) Technical field [0001] The invention relates to a grinding head for chemical mechanical grinding, in particular to a grinding head for chemical mechanical grinding which can effectively increase the uniformity of grinding. (2) Background technology [0002] Integrated circuits are usually formed on a substrate, especially a silicon wafer, by sequentially depositing conductive layers, semiconductor layers, and dielectric layers. After the films are deposited, the films are then etched to form the circuits. After a series of deposition and etching processes of conductor layer, semiconductor layer and dielectric layer, the edge of the substrate, the exposed part of the substrate or the surface of the uppermost film becomes very uneven. Uneven film surfaces can cause problems in integrated circuit fabrication. It is therefore necessary to planarize the film surface after each film deposition. [0003] Chemical mechanical polishing is the most commonly used planarization p...

AI Technical Summary

Problems solved by technology

However, the rigidity of the knife edge 110 and the bending of the elastic film 112 during grinding will cause uneven grinding effects such as the fast belt effect, which will increase the difficulty of the integrated circuit process and reduce the yield of the process.

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