Figure forming method
A pattern and process technology, applied in the field of pattern formation, can solve the problems of poor size, decreased qualification rate, no display effect, etc., and achieve the effect of preventing adhesion to the surface of the resist and improving the qualification rate
Inactive Publication Date: 2005-09-21
KK TOSHIBA
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Problems solved by technology
However, with the miniaturization of processing dimensions, the problem of dimensional differences in minute regions that cannot be solved by existing methods occurs, and more precise development is required.
In addition, many defects caused by developing have become a major problem that leads to a decrease in yield.
These problems cannot be solved in the conventional development process, and the pretreatment with pure water has no effect on these problems at all.
Method used
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Embodiment Construction
[0052] Embodiments of the present invention will be described below with reference to the drawings.
[0053] (first embodiment)
[0054] First, the chemical solution application device used in this embodiment will be described. figure 1 It is a schematic configuration diagram showing a chemical solution application device according to the first embodiment of the present invention.
[0055] Such as figure 1 As shown, a fixing table 101 for fixing a substrate 100 to be processed on the surface thereof is connected to a turning mechanism 102 for turning the fixing table 101 . On the fixed table 101 , a chemical solution supply nozzle 103 for discharging a chemical solution such as a developing solution and a cleaning solution onto the surface of the substrate 100 to be processed is provided. The chemical solution supply nozzle 103 is driven by a drive mechanism and moves relative to the substrate to be processed. With the relative movement of the chemical solution supply nozz...
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The purpose of the present invention is to control the size difference of the pattern formed on the photoresist film in the whole substrate and minute areas, and reduce the defect in the developing process. It comprises the following procedures: a pre-processing procedure of coating a photosensitive resist film 301a, 301b on a surface of substrate after exposure, coating an oxidizing liquid having an oxidative effect to thereby oxidize the surface of the resist film by the oxidizing liquid to form an oxide layer 310; a developing procedure of feeding a developing solution 302 to the photosensitive resist film whose surface has been oxidized to thereby perform a development of the resist film; and a cleaning procedure of feeding a rinsing solution to a surface of the substrate to wash the substrate.
Description
technical field [0001] The present invention relates to a pattern forming method in the manufacturing process of semiconductor devices, ULSI, electronic circuit components, liquid crystal display elements and the like. Background technique [0002] With the miniaturization of the size of the semiconductor element and the increase of the diameter of the substrate, there are problems such as the fatal defect caused by the development and the non-uniformity of the pattern size in the substrate and in the chip when the conventional development method is used. For these problems, it is generally necessary to control the development time, improve the developer, liquefy the cleaning solution, prolong the cleaning time, increase the number of cleanings, etc. Under the trend of further complicating the process, it is necessary to find a solution, which needs to be simple and New process with great effect. [0003] In the past methods used in the development process of substrates aft...
Claims
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IPC IPC(8): B05D1/40B05D3/10G03F7/32G03F7/38H01L21/027
CPCG03F7/38G03F7/322H01L21/027
Inventor 高桥理一郎早崎圭伊藤信一
Owner KK TOSHIBA