Method for producing semiconductor device and semiconductor device
A technology of semiconductors and wires, applied in the field of manufacturing semiconductor devices, which can solve problems such as component damage and reduced output of semiconductor devices
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no. 1 example
[0051] refer to Figure 1(a) to Figure 8 , the method of manufacturing a semiconductor device according to the first embodiment of the present invention will be explained below.
[0052] First, as shown in FIG. 1(a), a first group of holes 101a, 101a, . These first set of holes 101a are formed by well-known techniques such as laser beam machining, sandblasting and plasma etching, each hole 101a has a diameter of about 5 to 100 μm, and each hole 101a has a depth of about 5 to 500 μm.
[0053] Next, as shown in FIG. 1( b ), wire grooves 101 b , 101 b . . . are formed on one surface 101 d of the support-side silicon wafer 101 . As shown in the figure, some of the wire grooves 101b, 101b, . In the same manner as the first set of holes 101a was formed, this wire groove 101b is formed by well known techniques such as laser beam machining, sand blasting and plasma etching. The depth of each wire groove 101b is about 5 to 200 μm, and the width of each wire groove 101b is about 1 to...
no. 3 example
[0112] Next, refer to Figure 10(a) to Figure 17(b) , hereinafter, a method of manufacturing a semiconductor device according to a third embodiment of the present invention will be explained.
[0113] Unlike the first and second embodiments, this embodiment uses a glass substrate 201 instead of a silicon wafer 101 on the support side.
[0114] First, as shown in FIG. 10(a), a first set of holes 201a, 201a, 201a, 201a, … These first set of holes 201a, 201a, . . . are formed using well-known techniques, such as laser beam machining, sandblasting or plasma etching. Each hole has a diameter of about 5 to 200 μm and a depth of about 5 to 500 μm.
[0115] Next, as shown in FIG. 10(b), on one surface 201d of the support-side glass substrate 201, wire grooves 201b, 201b, . . . are formed. As shown in the figure, some of the wire grooves 201b, 201b, . In the same manner as the first set of holes 201a, these wire slots 201b are formed using well known techniques such as laser beam ...
no. 4 example
[0159] Next, referring to FIGS. 18 to 20, a method of manufacturing a semiconductor device according to a fourth embodiment of the present invention will be explained below. In this regard, similar components to those in the first to third embodiments are denoted by similar reference numerals, and explanations for the similar components will be omitted here.
[0160] This embodiment differs from the first to third embodiments in the process of forming the semiconductor film 108 . Except for this process, other processes are the same as those in the first to third embodiments. Therefore, only the process of forming the semiconductor film 108 will be explained here.
[0161] First, after the process shown in FIG. 2(d), as shown in FIG. 18(a), a process is provided in which glass is coated on the wire-embedded insulating film 103 and the metal barrier layer 106. , and the surface of the glass layer is ground and flattened to form SiO 2 Film 118 (surface flattening film).
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