Process for manufacturing integrated circuit on a substrate
A manufacturing method and technology of integrated circuits, which are applied in the fields of circuits, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as the inability to effectively shorten the channel of transistors
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[0040] The manufacturing method disclosed in the present invention will be described in detail as follows with examples and accompanying drawings. Figure 1A-1B is a flowchart of a manufacturing method according to an embodiment of the present invention. figure 2 ~1O is according to Figure 1A-1B The block diagram of the hybrid integrated circuit with embedded mask memory shown in the steps. and Figure 11 is the application Figure 2-10 Block diagram of embedded non-volatile memory with SONOS memory for process technology.
[0041] Please refer to Figure 1A-1B , each step is arranged in numerical order from step block 10 to step block 24 to illustrate the manufacturing method of the present invention. First, as described in step block 10 , the substrate is separated by a dielectric region 112 to define an array region 110 and a non-array region 111 . Such as figure 2 As shown, the dielectric region 112 is formed on the substrate by filling a trench with oxide or other ...
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