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Diode making process and structure

A diode and area technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as complex circuit fabrication

Inactive Publication Date: 2006-03-22
TPO DISPLAY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But this kind of circuit is more complicated to make

Method used

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  • Diode making process and structure
  • Diode making process and structure
  • Diode making process and structure

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Embodiment Construction

[0039] image 3 It is a schematic cross-sectional view of the first embodiment 300 of the present invention. The embodiment 300 includes a semiconductor layer 304 , an insulating layer 310 , and a metal layer 314 . The semiconductor layer 304 includes a first region 306 with a first carrier concentration and a second region 308 with a second carrier concentration. The insulating layer 310 is located on the semiconductor layer 304 and includes at least one contact window 312 . The metal layer 314 is located on the insulating layer 310 . The contact window 312 exposes a portion of the upper surface of the semiconductor layer 304 , and the metal layer 314 fills the contact window 312 to contact the semiconductor layer 304 . The first carrier concentration is a first positive carrier concentration, and the second carrier concentration is a second negative carrier concentration. The first region 306 adjoins the second region 308 .

[0040] Figure 4 It is a schematic cross-se...

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Abstract

The present invention provides one kind of diode making process and structure. The diode is used in antistatic circuit manufactured through film transistor process. The technological process includes the following steps: forming semiconductor layer on the substrate; forming the first region with the first carrier density on the semiconductor layer; forming the second region with the second carrier density on the semiconductor layer; forming insulating layer on the semiconductor layer; etching the insulating layer to form at least one contact window; and forming metal layer on the insulating layer. The contact window exposes partial upper surface of the semiconductor layer, and the metal layer is filled into the contact window to contact with the semiconductor layer.

Description

technical field [0001] The invention relates to a technique and structure of a diode. This diode is used in ESD protection circuits using thin film transistor technology. Background technique [0002] General electronic products (such as display panels) tend to accumulate a large amount of electrostatic charge during transportation. In turn, the product is impacted by a large current and its performance is reduced, or even damaged. Therefore, an electrostatic discharge protection circuit must be added to the product. [0003] figure 1 Shown is an ESD protection circuit 100 currently used in thin film transistor technology. The protection circuit 100 is mainly realized by using transistors 102 , 104 and resistors 106 , 108 . But this kind of circuit is more complicated to make. Contents of the invention [0004] The main purpose of the present invention is to provide a process and structure of a diode. This diode is used in ESD protection circuits using thin film tra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/328H01L23/60
Inventor 李英信杨胜捷石安柯明道曾当贵邓志刚
Owner TPO DISPLAY