Environment control device of display device and its environment control method
An environment and developer technology, applied in separation methods, chemical instruments and methods, and photoengraving processes of patterned surfaces, etc., can solve the problems of resist pattern change, foreign matter not completely removed, not an effective method, etc. , to achieve the effect of reducing the number of foreign objects
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Examples
no. 1 Embodiment approach
[0066] Refer below figure 1 , figure 2 and image 3 The environment control device of the development device and the control method of the development device according to the first embodiment of the present invention will be described.
[0067] figure 1 A schematic overall configuration of the environment control device of the development device according to the first embodiment of the present invention is shown. Such as figure 1 As shown, inside the clean room 1, for example, a developing device A, a coating device B, and a washing device C are provided. On the top of the clean room 1 is installed an air supply device 2 for a clean room that supplies air to the clean room 1 from the outside. In this air supply device 2 for a clean room, a pressure blower 3 for a clean room and a chemical filter 4 are installed. . Thereby, the air 5 taken in from the outside is supplied to the clean room 1 in a state in which chemical pollutants have been removed.
[0068] On the to...
Embodiment 1 and comparative example 1
[0093] Next, Example 1 which actualized the first embodiment and Comparative Example 1 performed for evaluating Example 1 will be described.
[0094] The common point of Example 1 and Comparative Example 1 is that a positive chemically amplified resist is applied on the wafer 16 to form a resist film 17 . In this case, the chemically amplified resist has a polyhydroxystyrene derivative as a polymer, an acetal group as a protecting group, and a diazomethane compound as an oxygen generator. Thereafter, the resist film 17 was prebaked by passing it through a hot plate at a temperature of 90° C. for 90 seconds, and then subjected to pattern exposure using a KrF excimer laser sequential exposure device.
[0095] Next, as Example 1, the SO in the supplied air 14 x Concentration is controlled at 0.50μg / m by filter unit 13A 3 In the following wafer processing chamber 10, the resist film 17 subjected to pattern exposure was subjected to post-baking at 120° C. for 90 seconds on a hot ...
Embodiment 2 and comparative example 2
[0101] Next, Example 2 which actualized the first embodiment and Comparative Example 2 performed to evaluate Example 2 will be described.
[0102] First, the common point of Example 2 and Comparative Example 2 is that a positive chemically amplified resist is applied on the wafer 16 to form a resist film 17 . In this case, the chemically amplified resist has a polyhydroxystyrene derivative as a polymer, an acetal group as a protecting group, and an onium salt as an oxygen generator. Thereafter, the resist film 17 was prebaked by passing it through a hot plate at a temperature of 90° C. for 90 seconds, and then subjected to pattern exposure using a KrF excimer laser sequential exposure device.
[0103] Next, as Example 2, the SO in the supplied air 14 x Concentration is controlled at 0.50μg / m by filter unit 13A 3 In the following wafer processing chamber 10, the resist film 17 subjected to pattern exposure was subjected to post-baking at 120° C. for 90 seconds on a hot plate,...
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Description
Claims
Application Information
- IPC
- H01L21/027; G03F7/00; B01D53/04; F24F3/16; G03F7/30
- CPC
- B01D53/0407; B01D2253/102; B01D2257/30; B01D2257/302; B01D2257/40; B01D2258/0216; B01D2259/4148; F24F3/161
- Inventors
- 片冈雅雄