Method and apparatus for treating substrate

Abstract

The object of the present invention is to form an interlayer insulating film on a substrate, and to cure the interlayer insulating film in a shorter time than the prior art. For this reason, the substrate processing method of the present invention includes: forming an interlayer insulating film on a substrate, irradiating an electron beam to the interlayer insulating film on the substrate in a processing chamber to cure it, and curing the interlayer insulating film after irradiating the electron beam. Finally, plasma is generated in the processing chamber and the potential of the substrate is lowered. Alternatively, the substrate processing method of the present invention includes: forming an interlayer insulating film on the substrate, irradiating the interlayer insulating film on the substrate with electron beams in the processing chamber to cure it, and forming the interlayer insulating film. Cloth becomes the coating process of the coating liquid of interlayer insulating film, and the preheating process of heating substrate is carried out between coating process and interlayer insulating film solidification process, by control device after described preheating process finishes and at The time until the substrate is irradiated with electron beams is controlled to be a certain time. The invention also provides a corresponding substrate processing device.

Description

technical field [0001] The present invention relates to a substrate processing method and a substrate processing device. Background technique [0002] In the manufacturing process of a semiconductor device having a multilayer wiring structure, an interlayer insulating film is formed on a wafer, and then the interlayer insulating film is processed. The so-called interlayer insulating film is an electrically insulating insulating layer in a multilayer wiring structure. As its insulating material, MSQ (methyl silsesquicyclopropane), HSQ (hydrogen silsesquicyclopropane), etc. are used. ). [0003] The processing related to such an interlayer insulating film is carried out in, for example, an SOD (Spin On Dielectric) device in which films are processed by a sol-gel method, a spinning method, a rapid film-forming method, and a focusing method. Forming method, in this film forming method, an interlayer insulating film is formed by applying the aforementioned coating liquid of MSQ...

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Problems solved by technology

[0007] Furthermore, the curing process in the heating furnace is performed in the minimum time for the completion of the polymer reaction in order to increase throughput, so when the film thickness of the interlayer insulating film is thick, it may be high in the deep part of the interlayer insulating film. Molecularization reaction is not fully carried out

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