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Method for preparing high quality GaN base material on specific saphire pattern substrate

A graphic substrate and sapphire technology, which is applied in semiconductor/solid-state device manufacturing, lasers, electrical components, etc., can solve problems such as low dislocation density, waste of raw materials, and degraded lattice quality, so as to reduce non-radiative recombination centers Corrosion damage, quality improvement effect

Inactive Publication Date: 2007-01-10
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The inclination of this lattice orientation deteriorates the lattice quality after lateral epitaxy, which is not conducive to obtaining large-area, low dislocation density, and uniformly distributed high-quality GaN-based materials
In addition, in the second maskless cantilever epitaxial growth process, before the lateral epitaxy is merged, there is still accumulation of epitaxial materials in the trench area, which wastes raw materials, which is not conducive to reducing production costs and saving resources.

Method used

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  • Method for preparing high quality GaN base material on specific saphire pattern substrate
  • Method for preparing high quality GaN base material on specific saphire pattern substrate
  • Method for preparing high quality GaN base material on specific saphire pattern substrate

Examples

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Effect test

Embodiment 1

[0025] Using plasma-enhanced chemical vapor deposition (PECVD) to vapor-deposit a silicon dioxide mask layer with a thickness of 200nm on the C-face sapphire; A strip-shaped silicon dioxide mask pattern along the [11 20] direction is etched on the upper surface. The length of the silicon dioxide mask layer stripe pattern is 15mm, the width is 2μm, and the width of the window area is 3μm; put the substrate into In an etching solution mixed with sulfuric acid and phosphoric acid with a volume ratio of 20:1, heat it in a temperature-controlled furnace and etch at 200°C for 1 hour; take out the substrate, rinse it with deionized water, and then put the substrate into In the hydrofluoric acid solution prepared by deionized water and hydrofluoric acid with a volume ratio of 10:1, corrode for 10 seconds; take out the substrate, and rinse it with deionized water for 10 minutes to obtain a clean sapphire pattern substrate. Such as figure 1 , 2 As shown, the mesa of the sapphire patte...

Embodiment 2

[0027]Adopt plasma-enhanced chemical vapor deposition (PECVD) to vapor-deposit a silicon dioxide mask layer with a thickness of 100nm on the C-plane sapphire; A strip-shaped silicon dioxide mask pattern along the [11 20] direction is etched on the upper surface. The length of the silicon dioxide mask layer stripe pattern is 50mm, the width is 4μm, and the width of the window area is 8μm; put the substrate into In an etching solution mixed with sulfuric acid and phosphoric acid with a volume ratio of 10:1, heat it in a temperature-controlled furnace and etch it at 300°C for 2 hours; take out the substrate, rinse it with deionized water, and then put the substrate into In the hydrofluoric acid solution prepared by deionized water and hydrofluoric acid with a volume ratio of 5:1, corrode for 5 seconds; take out the substrate, and rinse it with deionized water for 10 minutes to obtain a clean sapphire pattern substrate. The mesa of the sapphire pattern substrate is periodically ad...

Embodiment 3

[0029] Adopt plasma-enhanced chemical vapor deposition (PECVD) to vapor-deposit a silicon dioxide mask layer with a thickness of 300nm on the C-plane sapphire; A strip-shaped silicon dioxide mask pattern along the [11 20] direction is etched on the upper surface. The length of the silicon dioxide mask layer stripe pattern is 100 mm, the width is 1 μm, and the width of the window area is 10 μm; put the substrate into In an etching solution mixed with sulfuric acid and phosphoric acid with a volume ratio of 5:1, heat it in a temperature-controlled furnace and etch at 400°C for 3 hours; take out the substrate, rinse it with deionized water, and then put the substrate into In the hydrofluoric acid solution prepared by deionized water and hydrofluoric acid with a volume ratio of 20:1, etch for 20 seconds; take out the substrate, and rinse it with deionized water for 10 minutes to obtain a clean sapphire pattern substrate. The mesa of the sapphire pattern substrate is periodically a...

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Abstract

The invention method relates to wet corrosion technology used to obtain sapphire substrate with particular graph structure, then bridging epitaxial growth technology is used to deposit GaN bridging epitaxial layer and required component structure layer. By the invention, problem of lattice orientation tilting of epitaxial material produced by prior ELOG and CE technology, penetration dislocation density in GaN substrate epitaxial layer is reduced.

Description

technical field [0001] The invention relates to a method for preparing GaN-based materials with low dislocation density and high quality. Background technique [0002] The wide bandgap semiconductor GaN material has a wide range of applications in the fields of optoelectronics and microelectronics due to its unique physical properties. However, there is currently a lack of suitable epitaxial substrates that match the lattice constants of GaN, and its epitaxial films can only be grown on substrates that have a large mismatch with them, such as sapphire, silicon, and silicon carbide. The lattice constants and thermal expansion coefficients of these substrates are quite different from those of GaN, leading to threading dislocation densities as high as 10 in GaN-based growth layers. 8 -10 10 cm -2 . The existence of these dislocations limits the further improvement of the performance of optoelectronic devices, especially for ultraviolet light-emitting diodes, which have so f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/84H01L21/20H01L21/00H01L33/00H01S5/00
Inventor 郭丽伟贾海强王晶邢志刚汪洋陈弘周均铭
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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