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Semiconductor device and method of forming the same

A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve the problems of difficult preparation and inflexible process, and achieve the effects of improving process constraints, increasing manufacturing efficiency, and reducing manufacturing difficulty

Active Publication Date: 2021-07-16
SEMICON MFG ELECTRONICS (SHAOXING) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a method for forming a semiconductor device, so as to solve the problems that the existing forming method is difficult to prepare and the process is inflexible

Method used

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  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same

Examples

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preparation example Construction

[0038] As mentioned in the background, for the resonant structure provided with the metal ring and the mass load layer, the preparation process is difficult to be compatible, and the preparation method still needs to be improved. For details, please refer to figure 1 and figure 2 As shown, a method for forming a semiconductor device includes the following steps, for example.

[0039] In the first step, the lower electrode layer 21 is formed on the resonance region of the substrate 10 . figure 1 It schematically shows the first resonant region 10A and the second resonant region 10B where resonant structures need to be formed, and the lower electrode layer 21 is formed on both the first resonant region 10A and the second resonant region 10B.

[0040] In the second step, the piezoelectric layer 22 is formed on the substrate 10 .

[0041] In the third step, a metal ring 24 is formed on the piezoelectric layer 22 in the resonance area. figure 1 In other words, metal rings 24 a...

Embodiment 1

[0052] In this embodiment, a method for forming a semiconductor device is explained by taking a part of the resonant region provided with a mass-loaded layer and another part of the resonant region not provided with a mass-loaded layer as an example.

[0053] In step S100, specifically refer to Figure 4 As shown, a substrate 100 is provided, and there is at least one resonant region on the substrate 100, and the resonant region is a region for forming a resonant structure. In this embodiment, only two resonant regions are shown as examples for explanation, for example Figure 4 As shown, the substrate 100 has a first resonant region 100A and a second resonant region 100B.

[0054] Wherein, the substrate 100 can be correspondingly adjusted according to the specific application of the formed semiconductor device. For example, the semiconductor device can be a bulk acoustic wave filter (bulk acoustic wave, BAW), at this time, the substrate can include multiple Bragg reflection...

Embodiment 2

[0084] The difference from Embodiment 1 is that in this embodiment, the description is made for the case where mass load layers with different thicknesses are provided for different resonant structures of a semiconductor device.

[0085] specific reference Figure 9 As shown, the resonant structure of the first resonant region 100A of the semiconductor device and the resonant structure of the second resonant region 100B are both formed with mass load layers. Wherein, the thickness of the mass-loaded layer 250a in the first resonant region 100A is different from the thickness of the mass-loaded layer 250b in the second resonant region 100B, so that the resonance of the resonant structure in the first resonant region 100A The frequency is different from the resonance frequency of the resonance structure in the second resonance region 100B. In this embodiment, the thickness of the mass load layer 250a in the first resonant region 100A is greater than the thickness of the mass lo...

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Abstract

The invention provides a semiconductor device and a forming method thereof. By preferentially preparing the metal ring, the piezoelectric layer covers the metal ring, so that the metal ring will not be exposed from the surface of the piezoelectric layer, thereby avoiding damage to the metal ring when preparing the mass load layer, and can effectively improve the quality The limitation of the process of the load layer and the flexible adjustment of the order of the mass load layer and the upper electrode layer also improve the manufacturing efficiency of the device.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a forming method thereof. Background technique [0002] Applying resonant structures made of piezoelectric materials with inverse piezoelectric effect to semiconductor devices, crystal oscillators and filters (for example, bulk acoustic wave filters) can usually be further formed. Among them, the resonant structure of semiconductor devices generally includes upper and lower electrodes and a piezoelectric layer clamped between the upper and lower electrodes. At present, in order to prepare resonant structures with different frequencies, a mass load layer is usually provided, and by adjusting the mass load layer thickness to further realize the frequency tuning of the resonant structure. In addition, in order to improve the Q value of the device, an optional method is to add a metal ring around the resonant structure. [0003] In a practical semi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H3/02H03H9/02H03H9/17
CPCH03H3/02H03H9/02H03H9/17
Inventor 项少华罗传鹏王冲蔡敏豪单伟中王大甲
Owner SEMICON MFG ELECTRONICS (SHAOXING) CORP
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