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Chemically machinery milling technique and device

A technology of chemical machinery and grinding technology, which is applied in the direction of grinding devices, grinding tools, grinding machine tools, etc., can solve the problems of high slurry consumption, high cost, and long time, so as to reduce consumption, reduce manufacturing costs, and reduce complexity. degree as well as the effect of manufacturing cost

Inactive Publication Date: 2007-05-16
MACRONIX INT CO LTD
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Problems solved by technology

[0008] In the above-mentioned chemical mechanical polishing process, because it must take a lot of time to make the abrasive grains can completely fill the gaps of the layer to be polished before grinding, the amount of slurry used is also relatively high. Therefore, no matter from the aspect of time Or in terms of cost, it takes a long time and high cost

Method used

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  • Chemically machinery milling technique and device
  • Chemically machinery milling technique and device
  • Chemically machinery milling technique and device

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Embodiment Construction

[0037] The present invention provides a chemical mechanical polishing (CMP for short), which can be applied to the planarization process of various semiconductor elements, such as the planarization process ( planarization), but the present invention can be used in other planarization processes with different structures in response to various situations, and those that conform to the spirit of the present invention are applicable to the scope of the present invention.

[0038] 2A to 2C are schematic cross-sectional views of a planarization manufacturing process of a semiconductor device according to a preferred embodiment of the present invention. Moreover, in this embodiment, the planarization process during the fabrication of the shallow trench isolation structure is taken as an example.

[0039] Referring to FIG. 2A , a substrate 200 is provided, and a silicon nitride layer 202 is provided on the substrate 200 , and a silicon oxide layer 204 is provided between the silicon n...

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Abstract

The invention is a chemimechanical grinding process and device, where the process is suitable for using grinding pulp to grind a matter to be grinded on a substrate, and its characteristic lies in that before using a grinding pad to chemimechanically grind the substrate, it at first uses a soft grinding pad to make a pregrinding process on the substrate so as to eliminate the raised parts of the matter. Because the soft grinding pad can increase the contact area with the raised parts and insert grinding particles in the surface holes, it can directly grind the matter and further shorten process time and reduce the consumption of grinding particles, thus reducing the cost by a large margin.

Description

technical field [0001] The present invention relates to a chemical mechanical polishing (CMP) process, and in particular to a chemical mechanical polishing process and device capable of reducing process time and cost. Background technique [0002] In the semiconductor process, as the size of components continues to shrink, the resolution of lithography exposure also increases relatively, and with the reduction of exposure depth of field, the requirements for the level of fluctuations on the wafer surface are more stringent. Therefore, the current wafer planarization process (planarization) is completed by the chemical mechanical polishing process. Its unique anisotropic grinding properties can not only be used for the planarization of the surface contour of the wafer, but also be applied to vertical And the fabrication of mosaic structures of horizontal metal interconnects, the fabrication of shallow trench isolation of components in the front-end process and the fabrication...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/302B24B1/00B24B37/04C09K3/14B24B37/20
Inventor 洪永泰刘裕腾施学浩陈光钊
Owner MACRONIX INT CO LTD
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