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IC-compatible parylene MEMS Technology and its application of integrated sensors

A parylene and device technology, applied in the field of processing circuits, can solve problems such as incompatibility and cross-processing difficulties

Inactive Publication Date: 2002-04-03
CALIFORNIA INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the incompatible characteristics of most MEMS materials and IC processing, cross-processing becomes very difficult

Method used

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  • IC-compatible parylene MEMS Technology and its application of integrated sensors
  • IC-compatible parylene MEMS Technology and its application of integrated sensors
  • IC-compatible parylene MEMS Technology and its application of integrated sensors

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Embodiment Construction

[0016] This application describes the use of specific MEMS materials along with semiconductor processing.

[0017] One particular material used is parylene (parylene), which is deposited after the semiconductor structure is formed, also known as "post-deposition parylene." Parylene is used as an element of a MEMS structure. Parylene can also be used with photoresists, sputtered or low temperature evaporated metals. Protective materials, such as amorphous silicon, can also be used. In the disclosed mode, vapor phase bromine trifluoride is used as a homogeneous silicon etchant. The structure is formed by such etching to form a cavity under the parylene layer, and thus the parylene layer constitutes a structural part.

[0018] Chemical vapor deposited ("CVD") parylene can range in thickness from submicron to over 20 microns. Such thickness ratios allow for the formation of desirable high aspect ratio microstructures. Post-composite IC processing is performed at room temperat...

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Abstract

A combined IC / Mems process forms the IC parts first, and then forms the MEMS parts (110). One option forms a parylene overlayer, then forms a cavity under the parylene overlayer.

Description

(1) Technical field [0001] The invention relates to a method for processing a circuit, in particular to an integrated circuit with a compound IC / MEMS structure. (2) Background technology [0002] Microelectronics or MEMS devices often use semiconductor materials for their structures. Integrated circuit or ("IC") technology also uses the same materials to form its electronic structures. Certain applications desire the integration of MEMS devices and integrated circuits on a single substrate. [0003] The prior art teaches certain methods of making such units. The first method is to process the IC part first. MEMS are then processed on semi-finished semiconductor IC wafers. [0004] In order to avoid encroaching on the functions of electronic circuits, MEMS processing must have reliable compatibility. A major concern is the temperature of operation. All post-IC electronics processes typically need to be performed below 400°C: this is the maximum temperature that aluminum...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00B81B3/00B81B7/02H01L21/00H01L21/302H01L21/3065H01L29/84
CPCB81B2203/0127B81C2203/0735B81C1/00246
Inventor F·K·蒋Z·G·韩X·Q·王Y·C·泰
Owner CALIFORNIA INST OF TECH
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