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Exposure method

A technology of photoresist and light radiation, which is applied in the direction of microlithography exposure equipment, optics, photoplate making process exposure equipment, etc., and can solve the problem that the dimensional accuracy cannot be achieved

Inactive Publication Date: 2002-05-22
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Dimensional accuracy cannot be achieved with the bottom layer at the second photoresist pattern

Method used

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Embodiment Construction

[0025] Detailed Description of Preferred Embodiments

[0026] Hereinafter, the pattern forming method of the present invention will be described in detail with reference to the accompanying drawings. Here, an embodiment of the pattern forming method of the present invention used in a semiconductor device manufacturing method will be described. The pattern forming method of the present invention is not limited to use in a manufacturing method of a semiconductor device. It can also be widely used in the manufacturing method of micromachines, or in other manufacturing methods requiring the manufacture of fine patterns.

[0027] First, if Figure 1A As shown, a first photoresist pattern 2 is formed on a substrate 1 made of a semiconductor wafer by photolithography. Photolithography with chemically amplified photoresists is performed here. Chemically amplified photoresists refer to photoresists containing photoacid generators, which are patterned by the catalytic reaction of ac...

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Abstract

The invention provides a pattern forming method in which a minute resist pattern can be formed with uniform dimension accuracy in the plane of a substrate, while manufacturing costs and processing time are not increased. In a pattern forming method in which after a first resist pattern containing a photo-acid generating agent is formed on a substrate by a lithography method, a resist film containing a cross-linking agent, which reacts with acid, is coated on the substrate in a state where it covers the first resist pattern, a crosslinking reaction is made to occur at an interface between the first resist pattern and the resist film to grow a cross-linked layer, and a second resist pattern made of the cross-linked layer and the first resist pattern is formed, a step of irradiating the first resist pattern with light is carried out before the resist film is coated on the substrate.

Description

technical field [0001] The invention relates to a pattern forming method, in particular to a pattern forming method of a fine photoresist pattern used as a process mask in the manufacture of semiconductor devices and micromachines. Background technique [0002] As the integration level of semiconductor devices has increased, the fineness of gate, wiring, and connection hole patterns has increased. The photoresist pattern formed by photolithography is used as a mask, and each bottom film is etched to form these patterns. Photolithography includes steps such as source photoresist, pattern exposure and development. The minimum line width R of the photoresist pattern made in this way is represented by the following formula (1): [0003] R=K1×λ / NA (1) where K1 is a process constant, λ is the wavelength of light for exposure, and NA is the numerical aperture of the projection lens. [0004] It can be seen from formula (1) that shortening the wavelength λ of the exposure light a...

Claims

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Application Information

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IPC IPC(8): G03F7/40G03F7/00G03F7/09H01L21/027H01L21/302H01L21/3065H01L21/311H01L21/312H01L21/768
CPCH01L21/76816H01L21/31144G03F7/094H01L21/312H01L21/02118G03F7/00
Inventor 竹内幸一
Owner SONY CORP