Film transistor for LCD and making method
A technology of thin film transistors and display areas, which is applied in the fields of transistors, semiconductor/solid-state device manufacturing, instruments, etc., and can solve the problem that it is impossible to reduce the number of photomasks
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Embodiment 1
[0053] Figures 5A to 9B is a cross-sectional view describing a method of forming a via hole according to a first embodiment of the present invention, wherein Figure 5A , 6A , 7A, 8A, and 9A show a part of a buffer zone in a substrate formed with thin film transistors, Figure 5B , 6B , 7B, 8B and 9B show a part of the display area within the substrate.
[0054] see Figure 5A with 5B On the substrate 50 sequentially formed with the gate wiring 52 made of the first metal film, the gate insulating film 54 made of the organic insulating film and the data wiring 56 made of the second metal film, the deposition thickness is about 2 μm or Larger photosensitive organic passivation film 58 .
[0055] Utilize a photomask 80 to expose photosensitive organic passivation film 58, and this photomask has a slit structure or is made of translucent film at the opening region of organic passivation film 58, promptly on one side of through-hole region. Partial exposure composition. Th...
Embodiment 2
[0088] Figures 18A to 22B is a sectional view describing a method for forming a via hole according to a second embodiment of the present invention, wherein Figure 18A , 19A , 20A, 21A and 22A show the case where the inorganic insulating film exists on the metal film, while Figure 18B , 19B , 20B, 21B, and 22B show the case where no inorganic insulating film exists on the metal film.
[0089] see Figure 18A with 18B A metal film 204 for data wiring is deposited on a substrate on which a gate wiring (not shown) and a gate insulating film 202 are successively stacked. After that, if Figure 18B As shown, an inorganic insulating film made of silicon nitride is formed on some parts of the substrate, or as Figure 18A As shown, an inorganic insulating film was formed on other portions. After that, a photosensitive organic passivation film 208 with a thickness of about 2 μm is coated on the obtained substrate.
[0090] After that, the organic passivation film 208 is firs...
Embodiment 3
[0102] Figure 23 is a plan view of a thin film transistor for reflective and transmissive LCDs according to a third embodiment of the present invention. see Figure 23 , forming the reflective part 350 to surround the transmissive window 340 .
[0103] Figures 24A to 27C are cross-sectional views for describing a method of manufacturing a thin film transistor for an LCD according to a third embodiment, which are along Figure 23 Cross-sectional views taken along lines G-G', H-H' and L-L' of .
[0104] see Figures 24A to 24C After forming the gate wiring 320 made of the first metal film on the substrate 300, the gate insulating film 306 formed of an inorganic insulating film such as silicon nitride is formed thereon. The gate wiring includes a gate line 301 extending in a first direction, a gate electrode as a part of the gate line 301, and a gate buffer layer 303 connected to one end of the gate line 301 to receive a scan signal from the outside and transfer the receiv...
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Abstract
Description
Claims
Application Information
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