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Electronic equipment with CMOS circuit

A technology of electronic equipment and MOS transistors, used in circuits, logic circuits, electronic switches, etc.

Inactive Publication Date: 2003-04-09
SII SEMICONDUCTOR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] The above describes the problems of voltage detection circuits; however, it goes without saying that CMOS currents with other functions will encounter common problems in situations where low voltage operation is required

Method used

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  • Electronic equipment with CMOS circuit
  • Electronic equipment with CMOS circuit
  • Electronic equipment with CMOS circuit

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Embodiment Construction

[0022] Now, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings.

[0023] figure 1 is a circuit diagram showing a voltage detection circuit according to an embodiment of the present invention. exist Figure 4In the conventional voltage detection circuit shown, each MOS transistor has a normal block structure, but in the voltage detection circuit according to the present invention, a MOS transistor of a completely dissipative SOI structure is used, and they are compared with a MOS transistor of a block structure. It is superior in sub-threshold characteristics. Therefore, in the voltage detection circuit according to the present invention, a p-channel MOS transistor of a fully dissipation type SOI structure (hereinafter referred to as "FDSOIPMOS") and an n-channel MOS transistor of a fully dissipation type SOI structure (hereinafter referred to as "FDSOIPMOS") are used. "FDSOINMOS"), which can lower the ...

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Abstract

A depletion type n-channel MOS transistor (hereinafter referred to as ''D-type NMOS'') as a MOS transistor of a SOI structure is disposed between a plus side power supply terminal of a CMOS circuit and a plus side terminal of a power supply unit so as to connect a source thereof to the pulse side power supply terminal of the CMOS circuit, to connect a drain thereof to the plus side terminal of the power supply unit, and to input to a gate thereof a voltage such that even if the voltage of the plus side terminal of the power supply unit exceeds the upper limit of the operation voltage of the CMOS circuit, the source of the D-type NMOS is equal to or lower than the upper limit of the operation voltage of the CMOS circuit, and the same voltage as the voltage of the plus side terminal of the power supply means when the voltage of the plus side terminal of the power supply means is the vicinity of the lower limit of the operation voltage of the CMOS circuit.

Description

technical field [0001] The present invention relates to electronic devices having CMOS circuits, and more particularly, to electronic devices having CMOS circuits that require low voltage operation. Background technique [0002] Figure 4 is a circuit diagram showing a conventional voltage detection circuit. Such as Figure 4 As shown, the traditional voltage detection circuit is mainly composed of p-channel MOS transistors (hereinafter referred to as "PMOS"), n-channel MOS transistors (hereinafter referred to as "NMOS"), dissipative n-channel MOS transistors (hereinafter referred to as "D-type NMOS") which allows drain current to flow even when the potential difference between the source and gate is 0 volts, and consists of a resistor. The first PMOS 304 has a source connected to the power supply terminal 101; and a drain connected to its gate, the drain of the D-type NMOS 305, and the gate of the second PMOS 306, respectively; and the D-type NMOS 305 has The source is co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/04H01L21/822H03K5/08H03K17/22H03K19/0948
CPCH03K17/223H03K19/0948
Inventor 宇都宫文靖
Owner SII SEMICONDUCTOR CORP