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Method for mfg. semiconductor device with silicon carbide film

A technology of semiconductor and silicon carbide, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve problems such as difficult etching

Inactive Publication Date: 2003-04-16
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] If SiC is used as a substitute for SiN, although the interlayer insulating film can have a low dielectric constant, the SiC film will be more difficult to etch than the SiN film

Method used

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  • Method for mfg. semiconductor device with silicon carbide film
  • Method for mfg. semiconductor device with silicon carbide film
  • Method for mfg. semiconductor device with silicon carbide film

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Experimental program
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Embodiment Construction

[0029] Specific ways of implementing the invention

[0030] refer to Figures 1A-1C , the semiconductor device manufacturing method according to the first embodiment of the present invention will be described.

[0031] Such as Figure 1A As shown, copper wiring 2 is buried on the surface layer of interlayer insulating film 1 formed on the semiconductor substrate. Copper wiring 2 is formed by the damascene method. A SiC etching stopper film 3 with a thickness of 50 nm is formed on the interlayer insulating film 1 and the copper wiring 2 . Tetramethylsilane (Si(CH 3 ) 4 ), ammonia (NH 3 ) and nitrogen (N 2) to form an etching stopper film 3 by CVD. The formed SiC film contains Si-H bonds and C-H bonds.

[0032] An interlayer insulating film 4 made of SiLK manufactured by Dow Chemical Corporation and having a thickness of 500 nm is formed on the etching stopper film 3 . A SiC hard mask 5 having a thickness of 500 nm is formed on the interlayer insulating film 4 . The ha...

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PUM

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Abstract

A semiconductor device manufacture method is provided which utilizes a process capable of easily removing an etching stopper film or hard mask made of SiC. A first film is formed on a semiconductor substrate, the first film being made of material having a different etching resistance from silicon carbide. A second film of hydrogenated silicon carbide is formed on the first film. A resist film with an opening is formed on the second film. By using the resist mask as an etching mask, the second film is dry-etched by using mixture gas of fluorocarbon gas added with at least one of SF6 and NF3. The first film is etched by using the second film as a mask.

Description

[0001] Cross References to Related Applications [0002] This application is based on Japanese Patent No. 2001-312883 filed on October 10, 2001, the entire contents of which are incorporated herein by reference. technical field [0003] The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of manufacturing a semiconductor device including an etching process using a hydrogenated silicon carbide film as a hard mask or an etching stopper film. Background technique [0004] A conventional method of forming a wiring pattern will be briefly described below. An aluminum (Al) film or a tungsten (W) film is deposited and patterned on the interlayer insulating film on the semiconductor substrate to form a wiring pattern. Deposits on the sidewalls of the wiring patterns are removed by using alkaline chemicals. Then, an interlayer insulating film covering the wiring pattern is deposited by plasma enhanced chemical vapor d...

Claims

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Application Information

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IPC IPC(8): H01L21/28H01L21/302H01L21/3065H01L21/311H01L21/314H01L21/768
CPCH01L21/3148H01L21/76807H01L21/76802H01L21/31144H01L21/76813H01L21/76801H01L21/76811H01L21/31116H01L21/76897H01L21/02164H01L21/02203H01L21/022H01L21/02271H01L21/02211H01L21/02129H01L21/02134H01L21/02167H01L21/768
Inventor 驹田大辅各務克巳
Owner FUJITSU LTD