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Method of integrated manufacturing high-voltage element and low voltage element

A technology of high-voltage components and manufacturing methods, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as different thermal budgets, electrical instability of low-voltage components, and abnormal electrical drift of low-voltage components.

Inactive Publication Date: 2003-07-16
UNITED MICROELECTRONICS CORP
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  • Abstract
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  • Application Information

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Problems solved by technology

However, in the integrated manufacturing process of high-voltage components and low-voltage components, due to the different structures of low-voltage components and high-voltage components, the thermal budget required for the manufacturing process is different. grade region), and the high-temperature approach step of the junction area will cause the electrical properties of the low-voltage components to drift abnormally, resulting in the problem of electrical instability of the low-voltage components

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  • Method of integrated manufacturing high-voltage element and low voltage element
  • Method of integrated manufacturing high-voltage element and low voltage element
  • Method of integrated manufacturing high-voltage element and low voltage element

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Embodiment Construction

[0008] Figure 1A to Figure 1D As shown, it is a schematic cross-sectional flow diagram of a method for integrated manufacturing of high-voltage components and low-voltage components according to a preferred embodiment of the present invention.

[0009] Please refer to Figure 1A Firstly, a substrate 100 is provided, and a patterned insulating layer 106 is formed on the substrate 100 . The insulating layer 106 is, for example, a silicon nitride layer formed by low pressure chemical vapor deposition (LPCVD). The insulating layer 106 exposes a portion of the substrate 100 that will be used to form isolation regions in a subsequent manufacturing process. Next, an oxidation process is performed to oxidize the part of the substrate 100 exposed by the insulating layer 104 and the substrate 100 of the cutting region 102c to form isolation regions 104 and 104a, and the isolation region 104 isolates the high-voltage device region 102a and the low-voltage device region 102b. Wherein...

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Abstract

A method for integral manufacturing high-voltage element and low-voltage element includes such steps as providing a substrate with a patterned insulating layer, generating a first and a second isolating reginos between high-voltage and low-voltage elements, generating patterned photoresist layer, generating doped region in substrate under the exposed insulating layer, generating recess in the second isolating region, sequentially removing patterned photoresist layer and patterned insulating layer, generating join region, generating the first and the second grid structure in the high-voltage and low-voltage element regions, generating light doped drain region in the low-voltage element region, generating partion wall on grid walls, and generating heavy doped source / drain regions.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor element, and in particular to a method for integrated manufacturing of a high-voltage element and a low-voltage element. Background technique [0002] Generally speaking, the interface of a low-voltage logic circuit requires high-voltage components to convert the required voltage to various electronic devices. Therefore, in the design of integrated circuits, it is necessary to have a manufacturing process that is very compatible with the manufacture of low-voltage and high-voltage components. In addition to reducing manufacturing costs, it can also achieve different voltage values ​​required to drive various electronic devices. [0003] Existing high-voltage components are formed on the substrate by first forming a polysilicon gate, and then using the polysilicon gate as a mask to form a double diffused drain (double diffused drain) in the substrate in a self...

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Application Information

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IPC IPC(8): H01L21/70H01L21/82
Inventor 范永洁
Owner UNITED MICROELECTRONICS CORP