Optical multilayer structure and its production method, optical switching device, and image display

Abstract

An optical multilayer structure such that there is a degree of freedom of selection of constituent materials, quick response is possible even in the visible region, and the reliability of the wiring is high. In the optical mulitlayer structure (1), a first layer (11) formed in contact with a substrate (10) and absorbing light, a gap portion (12) having a variable size causing a light interference phenomenon, and a second layer (13) which is transparent are provided in this order on the substrate (10). The following formula (1) is satisfied where N1 (=n1-i.k1 where n1 is the refractive index, k1 is the extinction coefficient, i is the imaginary unit) is the complex refractive index of the first layer (11), n2 is the refractive index of the second layer (13), and the refractive index of the entrance medium is 1.0.

Description

technical field [0001] The present invention relates to an optical multilayer structure having the function of reflecting, transmitting or absorbing incident light, and its manufacturing method, and also relates to an optical switch device and an image display device. Background technique [0002] In recent years, displays as image information display devices have become increasingly important, and there is a need for development of high-speed-operating optical switching devices (light valves) for displays and optical communications, optical storage, optical printing or the like. Conventionally, as such a device, a device using a liquid crystal, a device using a micromirror (DMD: Digital Micromirror Device, a trademark of Texas Instruments Incorporated), a device using a diffraction grating (GLV: manufactured by SLM (Silicon Optical Machine) Grating light valve) equipment, etc. will be mentioned. [0003] GLV uses MEMS (Micro-Electro-Mechanical System) to form a diffraction...

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Problems solved by technology

[0006] However, in the device with the above structure, there is a problem that high-contrast light modulation cannot be achieved in the visible light range unless the reflectance ns of the substrate is as large as the value "4".

However, as described above, if the substrate is formed of Si, there is a problem of forming a sacrificial layer made of Si and subsequently using XeF 2 The method of etching sacrificial layer is not available

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