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Semiconductor device and its manufacturing method

A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., to achieve the effects of integration, damage reduction, and high integration

Inactive Publication Date: 2003-12-31
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] An object of the present invention is to provide a new semiconductor device capable of solving the above-mentioned problems of the conventional semiconductor device, a stacked semiconductor layer using the semiconductor device, and a method of manufacturing the semiconductor device.

Method used

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  • Semiconductor device and its manufacturing method
  • Semiconductor device and its manufacturing method
  • Semiconductor device and its manufacturing method

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Embodiment Construction

[0045] Embodiments of a semiconductor device, a stacked semiconductor device, these semiconductor devices, and a method for manufacturing the stacked semiconductor device according to the present invention will be described below with reference to the drawings.

[0046] First, refer to Figure 4 A first embodiment of the semiconductor device of the present invention will be described. Figure 4 The illustrated semiconductor device 1 has a substrate 2, and a semiconductor chip 3 is mounted on one surface 2a of the substrate 2, and bumps 4 for inter-substrate connection are provided. The semiconductor chip 3 and the inter-substrate connection bumps 4 mounted on the substrate 2 are sealed with a sealing resin 5 . The semiconductor chip 3, the bump 4 for inter-substrate connection, and the sealing resin 5 are on the opposite side to the substrate 2, that is, on the surface opposite to the substrate 2. Figure 4 The surface on the side facing the surface of the semiconductor devi...

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Abstract

The present invention relates to a semiconductor device having a semiconductor chip (3) mounted on a substrate (2) and includes a substrate having inetr-subtrate connecting electrodes (7) and (8) formed on both front and back surfaces and connected by through holes (9); a semiconductor chip having electrodes connected to a writing pattern formed on the substrate and a surface opposite to an electrode firming surface cut Flat; intersubstrate connecting bumps (4) provided on the inter-substrate connecting electrodes on the substrate and having surfaces opposite to the substrate cut flat; and an encapsulating resin (5) provided on the substrate to encapsulate the semiconductor chip and the inter-substrate connecting bumps and having surfaces opposite to the substrate cut flat surface (3a) of the semiconductor chip, the cut flat surfaces (4a) of the inter-substrate connecting bumps and the cut flat surfaces (5a) of the encapsulating resin are located in the same plane and the semiconductor chip and the inter-substrate connecting bumps areencapsulated in the encapsulating resin expect the cut flat surfaces.

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, particularly a semiconductor device including a stacked type and a manufacturing method thereof. Background technique [0002] In recent electronic devices, higher functions are being sought along with miniaturization. In order to achieve high functionality while reducing the size of the device, it is required to mount a large-capacity semiconductor device with the smallest possible mounting area and the smallest possible mounting volume. [0003] For example, in an electronic device using a semiconductor memory, further miniaturization of the device is being pursued while the amount of information to be processed is increasing. As the amount of information handled by electronic devices increases, in addition to increasing the capacity of semiconductor memories used to store such information, semiconductor memories mounted in devices are also required to be min...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/12H01B1/22H01L21/56H01L23/31H01L23/498H01L25/065H01L25/10H01L25/11H01L25/18H05K1/09H05K3/40
CPCH01L2924/01088H01L2225/1058H01L2924/18162H01L2224/73203H05K1/095H01L25/065H05K2201/0382H01L2924/0105H01L2924/01049H01L2224/97H01L21/568H01L2224/16H01L2224/73253H01L2225/06541H01L2924/15311H01L2224/13099H01L2924/19041H01L2924/01078H01L2924/01013H01L2224/32225H01L2224/92H01B1/22H01L2924/0103H01L23/532H01L24/19H01L2924/18161H01L2224/20H01L2924/15331H01L2924/01005H01L2224/1134H01L2224/73204H01L2224/04105H05K2203/1461H01L2224/12105H01L2224/32145H01L2924/12044H01L2924/01015H01L2924/01023H01L2924/01046H01L23/3121H01L2225/06586H01L24/96H01L2924/01004H01L21/56H01L2224/83101H01L2924/30105H01L2225/1023H01L2924/00013H01L2224/16225H01L2924/01027H01L21/563H01L2924/15321H01L2924/01024H01L2924/01079H01L2225/0652H01L24/97H01L2924/10253H01L2924/01047H01L23/49816H01L2924/01082H05K3/4069H01L25/105H05K2201/0355H01L25/0657H01L2924/14H01L2225/06517H01L24/29H01L2924/01006H01L2924/01029H01L2924/01033H01L2924/181H01L2924/12042H01L2924/00014H01L2924/3512H01L2924/00H01L2924/00012H01L2224/0401Y10T29/4935
Inventor 小池敏彦本田学加藤益雄
Owner SONY CORP