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Storage test circuit

A memory testing and memory technology, applied in static memory, circuits, measuring electricity, etc., can solve the problems of deterioration of wiring characteristics, increased circuit size, and increased area.

Inactive Publication Date: 2004-04-14
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the other hand, in the BIST circuit shown in Fig. 11, the increase in area due to the incorporation of the RAM test command memory inside the LSI and the testing of the RAM test command memory itself are also problems
In the BIST circuit proposed in Patent Document 2, although the area increase due to the increase of the RAM test command memory does not occur, due to the extraction of the program from the scan path register inside the LSI used as a substitute for the RAM test memory Area increase due to signal lines, etc. and deterioration of wiring characteristics during design are problematic
Also, since these test circuits generate test patterns from programs, there are disadvantages in that, in the RAM test control circuit and test pattern generator, circuits for decoding programs, generating control signals for RAM, etc. are required, and the circuit size becomes large

Method used

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Embodiment Construction

[0029] Afterwards, referring to the accompanying drawings, the present invention will be explained in more detail according to the embodiments of the present invention.

[0030] FIG. 1 shows the structure of an LSI having a memory test circuit related to an embodiment of the present invention. The LSI to which the memory test circuit of the present invention is applied has a plurality of RAMs 91 - 9m and a test circuit 500 .

[0031] The output 6 of the test circuit 500 is a data signal, an address signal, a chip select (CS) signal, and a read / write (R / W) signal which are input signals to each of the RAMs 91-9m during the test, and is connected with the select One input of selector 4 is connected, and the data signal, address signal, CS signal and R / W signal are connected to the other input of selector 4 as input signal 7 to each of RAM 91-9m during normal operation.

[0032] The selector 4 is mutually switched between the signals 6 and 7 by the test switch signal 1 input fro...

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Abstract

Each signal generating circuit for generating a CS signal, an address signal, a data signal or an R / W signal of a memory to be tested, and a test setting control circuit for generating a control data of these signal generating circuits are provided. The signal generating circuits and the test setting control circuit have shift registers, and a control data and a test data are serially input to these shift registers from external terminals.

Description

technical field [0001] The present invention relates to a memory test circuit, and more particularly, to a test circuit for a semiconductor integrated circuit memory in which memory and logic are mixedly mounted on one semiconductor chip. Background technique [0002] In recent years, various LSIs such as ASICs and microprocessors have been proposed in which memories are mixedly incorporated in logic sections. In such an LSI, a signal from the logic section controls the normal operation of the memory, for example, when a read command is issued from the logic section, the memory outputs data of a selected address to the logic section. Similarly, the memory outputs the data of the selected address to the logic part. In such an LSI, since it is impractical to test the memory through a complicated logic section, various dedicated test circuits for testing the memory have been proposed. [0003] FIG. 10 is a view showing the structure of a conventional memory test circuit (refe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/28G01R31/3185G11C29/00G11C29/12G11C29/14H01L21/822H01L27/04
CPCG11C29/14G11C29/00
Inventor 川崎达也
Owner RENESAS ELECTRONICS CORP
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