Unlock instant, AI-driven research and patent intelligence for your innovation.

Magnetron sputtering apparatus and magnetron sputtering method using the same

A magnetron and sputtering technology, applied in sputtering, discharge tube, ion implantation and other directions, can solve the problem of reducing the step coverage and so on

Inactive Publication Date: 2004-06-02
SAMSUNG ELECTRONICS CO LTD
View PDF1 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

like Figure 3C As shown, since the target material 33 cannot completely fill the trench 32, a void is formed
Therefore, using a target larger than the substrate 31 reduces the step coverage in conventional sputtering devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetron sputtering apparatus and magnetron sputtering method using the same
  • Magnetron sputtering apparatus and magnetron sputtering method using the same
  • Magnetron sputtering apparatus and magnetron sputtering method using the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] Figure 4 is a schematic cross-sectional view of a magnetron sputtering device according to an embodiment of the present invention. Such as Figure 4As shown, the vacuum chamber 101 has a gas inlet and a gas outlet (not shown in the figure); the drive unit 107 arranged outside the vacuum chamber 101 is connected to the magnetic circuit unit 105 arranged inside the vacuum chamber 101 so as to drive the magnetic circuit Circular motion of unit 105. A substrate supporter 103 for supporting the substrate 100 is located in the bottom space of the vacuum chamber 105 . The support shaft 128 for supporting the substrate holder 103 is inserted inside the vacuum chamber 101 and can move the substrate holder 103 up and down so as to control the distance between the substrate holder 103 and the magnetic circuit unit 105 . The magnetic circuit unit 105 and the substrate 100 are opposed to each other and arranged eccentrically. The magnetic circuit unit 105 includes a target elec...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to View More

Abstract

Provided is a magnetron sputtering system, and to provide a magnetron sputtering method. The magnetron sputtering system is provided with: a vacuum chamber including: an introduction port of discharge gas and an exhaust port of discharge gas; a substrate holder provided inside the vacuum chamber, and mounted with a substrate; a magnetic circuit part circularly moved with the central axis of the substrate holder as the center so as to be confronted with the substrate holder, and comprising a target electrode confronted with the substrate and a magnetron fixed to the rear surface thereof; and a driving part for circularly moving the magnetic circuit part and controlling the distance of the substrate holder from the central axis. Thus, the degree of homogeneity (uniformity of film thickness or the like) of the thin film can be improved, and further its step coverage properties can be improved.

Description

technical field [0001] The invention relates to a magnetron sputtering device and method, in particular to a magnetron sputtering device and a magnetron sputtering method for forming a thin film on a substrate when manufacturing semiconductor devices and other electronic devices. Background technique [0002] Due to the advantage of easy control of the sputtering device, magnetron sputtering is often used to form a thin film on a substrate when manufacturing semiconductor devices and other electronic devices. The flat magnetron sputtering device has been widely used in the production of microelectronic devices and optical devices due to its advantages of high deposition rate, low production cost, restriction electron emission, and suitable for refractory metals and compounds. . [0003] In a conventional sputtering device, a deposition substrate and a target made of a film-forming material are placed facing each other in a vacuum reactor or vacuum chamber, and a discharge g...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/203C23C14/35H01J37/34H01L21/285
CPCH01J37/3408C23C14/35H01J37/3455
Inventor 瑟吉·Y·纳瓦拉马东俊金泰完
Owner SAMSUNG ELECTRONICS CO LTD